Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor<sub /> <sub /> <sub /> <sub /> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor

Qihao Zhang, Yisong Shen, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu.

IEEE Journal of the Electron Devices Society 10 942-946. 2022.

https://doi.org/10.1109/jeds.2022.3214000

Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher)

NIMS著者

劉江偉

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-11-23 03:25:19 +0900更新時刻: 2024-03-31 17:04:20 +0900

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