publication_type publication_year number author title journal_title volume_number issue_number start_page end_page doi reported_at Paper 2024 1 劉 江偉, 寺地 徳之, 達 博, 小出 康夫 ホウ素ドープダイヤモンド金属-酸化膜-半導体電界効果トランジスタ NEW DIAMOND 誌 40 1 19 21 2024-03-28 21:34:38 +0900 Paper 2024 2 Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide IEEE Transactions on Electron Devices 71 3 1764 1768 https://doi.org/10.1109/ted.2024.3356468 2024-03-28 21:34:38 +0900 Paper 2024 3 J. W. Liu, T. Teraji, B. Da, Y. Koide Applied Physics Letters 124 7 https://doi.org/10.1063/5.0194424 2024-03-28 21:34:38 +0900 Paper 2023 1 Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Yang Sun, Jin Hu, Jiangwei Liu, Daiming Tang, Han Zhang, Zhaoshun Gao, Hongxuan Guo, Hideki Yoshikawa, Shigeo Tanuma Science and Technology of Advanced Materials: Methods 3 1 https://doi.org/10.1080/27660400.2023.2230870 2024-03-28 21:34:38 +0900 Paper 2023 2 Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide Nanomaterials 13 7 1256 https://doi.org/10.3390/nano13071256 2024-03-28 21:34:38 +0900 Paper 2023 3 Xiaolu Yuan, Jinlong Liu, Jiangwei Liu, Junjun Wei, Liangxian Chen, Chengming Li Science Talks 8 100277 https://doi.org/10.1016/j.sctalk.2023.100277 2024-03-28 21:34:38 +0900 Paper 2023 4 Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide IEEE Transactions on Electron Devices 70 5 2199 2203 https://doi.org/10.1109/ted.2023.3256349 2024-03-28 21:34:38 +0900 Paper 2023 5 Qihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu Journal of Alloys and Compounds 939 168732 https://doi.org/10.1016/j.jallcom.2023.168732 2024-03-28 21:34:38 +0900 Paper 2023 6 Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins Advanced Electronic Materials 9 2 2201007 https://doi.org/10.1002/aelm.202201007 2024-03-28 21:34:38 +0900 Paper 2022 1 Qihao Zhang, Yisong Shen, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu IEEE Journal of the Electron Devices Society 10 942 946 https://doi.org/10.1109/jeds.2022.3214000 2024-03-28 21:34:38 +0900 Paper 2022 2 B. Da, X. Liu, J.M. Gong, Z.H. Zhang, Z.J. Ding, N.T. Cuong, J. Hu, J.W. Liu, Z.S. Gao, H.X. Guo, H.X. Wang, H. Zhang, Y. Harada, H. Yoshikawa, S. Tanuma Applied Surface Science 596 153616 https://doi.org/10.1016/j.apsusc.2022.153616 2024-03-28 21:34:38 +0900 Paper 2022 3 Yisong Shen, Qihao Zhang, Kai Xiao, Ning Xia, Hui Zhang, Dongyuan Zhai, Min He, Jiangwei Liu, Jiwu Lu Micro and Nanostructures 168 207318 https://doi.org/10.1016/j.micrna.2022.207318 2024-03-28 21:34:38 +0900 Paper 2022 4 B. Da, X. Liu, L. H. Yang, J. M. Gong, Z. J. Ding, H. Shinotsuka, J. W. Liu, H. Yoshikawa, S. Tanuma Journal of Applied Physics 131 17 https://doi.org/10.1063/5.0085984 2024-03-28 21:34:38 +0900 Paper 2022 5 Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide IEEE Transactions on Electron Devices 69 3 1181 1185 https://doi.org/10.1109/ted.2022.3140699 2024-03-28 21:34:38 +0900 Paper 2021 1 Z.J. Ding, Chao Li, Bo Da, Jiangwei Liu Charging effect induced by electron beam irradiation: a review Science and Technology of Advanced Materials 22 1 932 971 https://doi.org/10.1080/14686996.2021.1976597 2024-03-28 21:34:38 +0900 Paper 2021 2 Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance IEEE Transactions on Electron Devices 68 8 3963 3967 https://doi.org/10.1109/ted.2021.3087115 2024-03-28 21:34:38 +0900 Paper 2021 3 Dabao Lu, Keisuke Goto, Bo Da, Jiangwei Liu, Hideki Yoshikawa, Shigeo Tanuma, Z.J. Ding Secondary electron-, Auger electron- and reflected electron-spectroscopy study on sp2-hybridization carbon materials: HOPG, carbon glass and carbon fiber Journal of Electron Spectroscopy and Related Phenomena 250 147086 https://doi.org/10.1016/j.elspec.2021.147086 2024-03-28 21:34:38 +0900 Paper 2021 4 Xiaolu Yuan, Jiangwei Liu, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C Coatings 11 4 470 https://doi.org/10.3390/coatings11040470 2024-03-28 21:34:38 +0900 Paper 2021 5 L. H. Yang, B. Da, H. Yoshikawa, S. Tanuma, J. Hu, J. W. Liu, D. M. Tang, Z. J. Ding Low-energy electron inelastic mean free path and elastic mean free path of graphene Applied Physics Letters 118 5 053104 https://doi.org/10.1063/5.0029133 2024-03-28 21:34:38 +0900 Paper 2021 6 Jiangwei Liu, Orlando Auciello, Elida de Obaldia, Bo Da, Yasuo Koide Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs Carbon 172 112 121 https://doi.org/10.1016/j.carbon.2020.10.031 2024-03-28 21:34:38 +0900 Paper 2020 1 Qihao Zhang, Jiwu Lu, Dongyuan Zhai, Jing Xiao, Min He, Jiangwei Liu Electrical Properties of Al2O3/ZnO Metal–Insulator–Semiconductor Capacitors IEEE Transactions on Electron Devices 67 11 5033 5038 https://doi.org/10.1109/ted.2020.3021369 2024-03-28 21:34:38 +0900 Paper 2020 2 Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors IEEE Transactions on Electron Devices 67 4 1680 1685 https://doi.org/10.1109/ted.2020.2972979 2024-03-28 21:34:38 +0900 Paper 2020 3 Bo Da, Lihao Yang, Jiangwei Liu, Yonggang Li, Shifeng Mao, Zejun Ding Monte Carlo simulation study of reflection electron energy loss spectroscopy of an Fe/Si overlayer sample Surface and Interface Analysis 52 11 742 754 https://doi.org/10.1002/sia.6864 2024-03-28 21:34:38 +0900 Paper 2020 4 J. W. Liu, H. Oosato, B. Da, Y. Koide Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors Applied Physics Letters 117 16 163502 https://doi.org/10.1063/5.0023086 2024-03-28 21:34:38 +0900 Paper 2020 5 Rui Lu, Jiwu Lu, Ping Liu, Min He, Jiangwei Liu Design of the VRLA Battery Real-Time Monitoring System Based on Wireless Communication Sensors 20 15 4350 https://doi.org/10.3390/s20154350 2024-03-28 21:34:38 +0900 Paper 2020 6 Die Wang, Gang He, Lin Hao, Lesheng Qiao, Zebo Fang, Jiangwei Liu Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers ACS Applied Materials & Interfaces 12 22 25390 25399 https://doi.org/10.1021/acsami.0c02963 2024-03-28 21:34:38 +0900 Paper 2020 7 Krishna Pandey, Rabindra Basnet, Aaron Wegner, Gokul Acharya, Md Rafique Un Nabi, Jiangwei Liu, Jian Wang, Y. K. Takahashi, Bo Da, Jin Hu Electronic and magnetic properties of the topological semimetal candidate NdSbTe Physical Review B 101 23 https://doi.org/10.1103/physrevb.101.235161 2024-03-28 21:34:38 +0900 Paper 2020 8 Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond AIP Advances 10 5 055114 https://doi.org/10.1063/5.0008167 2024-03-28 21:34:38 +0900 Paper 2020 9 Yan-zhao Guo, Jin-long Liu, Jiang-wei Liu, Yu-ting Zheng, Yun Zhao, Xiao-lu Yuan, Zi-hao Guo, Li-fu Hei, Liang-xian Chen, Jun-jun Wei, Jian-peng Xing, Cheng-ming Li Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition International Journal of Minerals, Metallurgy and Materials 27 5 703 712 https://doi.org/10.1007/s12613-019-1944-0 2024-03-28 21:34:38 +0900 Paper 2020 10 Bo Da, Yang Sun, Zhufeng Hou, Jiangwei Liu, Nguyen Thanh Cuong, Kazuhito Tsukagoshi, Hideki Yoshikawa, Shigeo Tanuma, Jin Hu, Zhaoshun Gao, Zejun Ding Measurement of the Low-Energy Electron Inelastic Mean Free Path in Monolayer Graphene Physical Review Applied 13 4 https://doi.org/10.1103/physrevapplied.13.044055 2024-03-28 21:34:38 +0900 Paper 2019 1 Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide High Current Output Hydrogenated Diamond Triple-Gate MOSFETs IEEE Journal of the Electron Devices Society 7 561 565 https://doi.org/10.1109/jeds.2019.2915250 2024-03-28 21:34:38 +0900 Paper 2019 2 Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors IEEE Electron Device Letters 40 11 1748 1751 https://doi.org/10.1109/led.2019.2942967 2024-03-28 21:34:38 +0900 Paper 2019 3 Bo Da, Jiangwei Liu, Yoshitomo Harada, Nguyen T. Cuong, Kazuhito Tsukagoshi, Jin Hu, Lihao Yang, Zejun Ding, Hideki Yoshikawa, Shigeo Tanuma Observation of Plasmon Energy Gain for Emitted Secondary Electron in Vacuo The Journal of Physical Chemistry Letters 10 19 5770 5775 https://doi.org/10.1021/acs.jpclett.9b02135 2024-03-28 21:34:38 +0900 Paper 2019 4 Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin, Zhan-guo Wang Recent progress in diamond-based MOSFETs International Journal of Minerals, Metallurgy, and Materials 26 10 1195 1205 https://doi.org/10.1007/s12613-019-1843-4 2024-03-28 21:34:38 +0900 Paper 2019 5 J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C Journal of Physics D: Applied Physics 52 31 315104 https://doi.org/10.1088/1361-6463/ab1e31 2024-03-28 21:34:38 +0900 Paper 2018 1 LIU, Jiangwei An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors SENSORS 18 6 813-1 813-17 https://doi.org/10.3390/s18060813 2024-03-28 21:34:38 +0900 Paper 2018 2 Kongping Wu, Meiyong Liao, Liwen Sang, Jiangwei Liu, Masataka Imura, Haitao Ye, Yasuo Koide A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface Journal of Applied Physics 123 16 161599 https://doi.org/10.1063/1.5002176 2024-03-28 21:34:38 +0900 Paper 2018 3 J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide Annealing effects on hydrogenated diamond NOR logic circuits Applied Physics Letters 112 15 153501 https://doi.org/10.1063/1.5022590 2024-03-28 21:34:38 +0900 Paper 2017 1 Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate physica status solidi (a) 214 11 1700463 https://doi.org/10.1002/pssa.201700463 2024-03-28 21:34:38 +0900 Paper 2017 2 Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide Logic circuits with hydrogenated diamond field-effect transistors IEEE Electron Device Letters 38 7 922 925 https://doi.org/10.1109/led.2017.2702744 2024-03-28 21:34:38 +0900 Paper 2017 3 J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters Journal of Applied Physics 121 22 224502 https://doi.org/10.1063/1.4985066 2024-03-28 21:34:38 +0900 Paper 2017 4 Bo Da, Jiangwei Liu, Mahito Yamamoto, Yoshihiro Ueda, Kazuyuki Watanabe, Nguyen Thanh Cuong, Songlin Li, Kazuhito Tsukagoshi, Hideki Yoshikawa, Hideo Iwai, Shigeo Tanuma, Hongxuan Guo, Zhaoshun Gao, Xia Sun, Zejun Ding Virtual substrate method for nanomaterials characterization Nature Communications 8 15629 https://doi.org/10.1038/ncomms15629 2024-03-28 21:34:38 +0900 Paper 2017 5 J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator Applied Physics Letters 110 20 203502 https://doi.org/10.1063/1.4983091 2024-03-28 21:34:38 +0900 Paper 2017 6 Jiangwei Liu, Yasuo Koide Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors BIOSENSORS AND BIODETECTION 1572 "" 217 232 https://doi.org/10.1007/978-1-4939-6911-1_15 2024-03-28 21:34:38 +0900 Paper 2017 7 Yijun Yang, Dai-Ming Tang, Chao Zhang, Yihui Zhang, Qifeng Liang, Shimou Chen, Qunhong Weng, Min Zhou, Yanming Xue, Jiangwei Liu, Jinghua Wu, Qiu Hong Cui, Chao Lian, Guolin Hou, Fangli Yuan, Yoshio Bando, Dmitri Golberg, Xi Wang “Protrusions” or “holes” in graphene: which is the better choice for sodium ion storage? Energy & Environmental Science 10 4 979 986 https://doi.org/10.1039/c7ee00329c 2024-03-28 21:34:38 +0900 Paper 2017 8 Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, Yasuo Koide Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel Journal of Applied Physics 121 2 025702 https://doi.org/10.1063/1.4972979 2024-03-28 21:34:38 +0900 Paper 2016 1 Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide Design and fabrication of high-performance diamond triple-gate field-effect transistors Scientific Reports 6 1 https://doi.org/10.1038/srep34757 2024-03-28 21:34:38 +0900 Paper 2016 2 Elisseos Verveniotis, Yuji Okawa, Marina V. Makarova, Yasuo Koide, Jiangwei Liu, Břetislav Šmíd, Kenji Watanabe, Takashi Taniguchi, Katsuyoshi Komatsu, Takeo Minari, Xuying Liu, Christian Joachim, Masakazu Aono 原子レベルで平坦な絶縁体基板上のジアセチレン分子の自己集合 Physical Chemistry Chemical Physics 18 46 31600 31605 https://doi.org/10.1039/c6cp06749b 2024-03-28 21:34:38 +0900 Paper 2016 3 J. W. Liu, M. Y. Liao, M. Imura, Y. Koide High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: band configuration, breakdown field, and electrical properties of field-effect transistor Journal of Applied Physics 120 12 124504 https://doi.org/10.1063/1.4962851 2024-03-28 21:34:38 +0900 Paper 2016 4 Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors Journal of Applied Physics 120 11 115307 https://doi.org/10.1063/1.4962854 2024-03-28 21:34:38 +0900 Paper 2016 5 F.N. Li, J.W. Liu, J.W. Zhang, X.L. Wang, W. Wang, Z.C. Liu, H.X. Wang Measurement of barrier height of Pd on diamond (100) surface byX-ray photoelectron spectroscopy Applied Surface Science 370 496 500 https://doi.org/10.1016/j.apsusc.2016.02.189 2024-03-28 21:34:38 +0900 Paper 2016 6 Chao Zhang, Xi Wang, Qifeng Liang, Xizheng Liu, Qunhong Weng, Jiangwei Liu, Yijun Yang, Zhonghua Dai, Kejian Ding, Yoshio Bando, Jie Tang, Dmitri Golberg Amorphous Phosphorus/Nitrogen-doped graphene paper for ultrastable sodium-ion batteries Nano Letters 16 3 1530 1536 https://doi.org/10.1021/acs.nanolett.6b00057 2024-03-28 21:34:38 +0900 Paper 2016 7 Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond Applied Physics Letters 108 1 012105 https://doi.org/10.1063/1.4939650 2024-03-28 21:34:38 +0900 Paper 2015 1 J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, Y. Koide Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors Journal of Applied Physics 118 11 115704 https://doi.org/10.1063/1.4930294 2024-03-28 21:34:38 +0900 Paper 2015 2 Jiangwei Liu, Meiyong Liao, Masataka Imura, Akihiro Tanaka, Hideo Iwai, Yasuo Koide Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric Scientific Reports 4 1 https://doi.org/10.1038/srep06395 2024-03-28 21:34:38 +0900 Paper 2015 3 Xi Wang, Dequan Liu, Qunhong Weng, Jiangwei Liu, Qifeng Liang, Chao Zhang Cu/Li4Ti5O12 scaffolds as superior anodes for lithium-ion batteries NPG Asia Materials 7 4 e171 e171 https://doi.org/10.1038/am.2015.23 2024-03-28 21:34:38 +0900 Paper 2015 4 Jiangwei Liu, Meiyong Liao, Masataka Imura, Hirotaka Oosato, Eiichiro Watanabe, Yasuo Koide Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond Diamond and Related Materials 54 55 58 https://doi.org/10.1016/j.diamond.2014.10.004 2024-03-28 21:34:38 +0900 Paper 2015 5 Meiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li, Masataka Imura, Yasuo Koide, Haitao Ye Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures Applied Physics Letters 106 8 083506 https://doi.org/10.1063/1.4913597 2024-03-28 21:34:38 +0900 Paper 2014 1 J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor Applied Physics Letters 105 8 082110 https://doi.org/10.1063/1.4894291 2024-03-28 21:34:38 +0900 Paper 2014 2 Xi Wang, Zhenhua Chen, Dequan Liu, Wei Tian, Qi Wang, Chao Zhang, Jiangwei Liu, Liyuan Han, Yoshio Bando, Dmitri Golberg Triple-yolked ZnO/CdS hollow spheres for semiconductor-sensitized solar cells Particle & Particle Systems Characterization 31 7 757 762 https://doi.org/10.1002/ppsc.201300365 2024-03-28 21:34:38 +0900 Paper 2014 3 J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material Journal of Physics D: Applied Physics 47 24 245102 https://doi.org/10.1088/0022-3727/47/24/245102 2024-03-28 21:34:38 +0900 Paper 2014 4 Chao Zhang, Wei Tian, Zhi Xu, Xi Wang, Jiangwei Liu, Song-Lin Li, Dai-Ming Tang, Dequan Liu, Meiyong Liao, Yoshio Bando, Dmitri Golberg Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests Nanoscale 6 14 8084 https://doi.org/10.1039/c4nr00963k 2024-03-28 21:34:38 +0900 Paper 2014 5 Gang He, Jiangwei Liu, Hanshuang Chen, Yanmei Liu, Zhaoqi Sun, Xiaoshuang Chen, Mao Liu, Lide Zhang Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation J. Mater. Chem. C 2 27 5299 5308 https://doi.org/10.1039/c4tc00572d 2024-03-28 21:34:38 +0900 Paper 2014 6 Wei Tian, Chao Zhang, Tianyou Zhai, Song-Lin Li, Xi Wang, Jiangwei Liu, Xiao Jie, Dequan Liu, Meiyong Liao, Yasuo Koide, Dmitri Golberg, Yoshio Bando Flexible ultraviolet photodetectors with broad photoresponse based on branched ZnS-ZnO heterostructure nanofilms ADVANCED MATERIALS 26 19 3088 3093 https://doi.org/10.1002/adma.201305457 2024-03-28 21:34:38 +0900 Paper 2013 1 Jiangwei Liu, Shaoheng Cheng, Meiyong Liao, Masataka Imura, Akihiro Tanaka, Hideo Iwai, Yasuo Koide Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy Diamond and Related Materials 38 24 27 https://doi.org/10.1016/j.diamond.2013.06.005 2024-03-28 21:34:38 +0900 Paper 2013 2 J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors Journal of Applied Physics 114 8 084108 https://doi.org/10.1063/1.4819108 2024-03-28 21:34:38 +0900 Paper 2013 3 J. W. Liu, M. Y. Liao, M. Imura, Y. Koide Normally-off HfO2-gated diamond field effect transistors Applied Physics Letters 103 9 092905 https://doi.org/10.1063/1.4820143 2024-03-28 21:34:38 +0900 Paper 2013 4 J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, Y. Koide Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction Journal of Applied Physics 113 12 123706 https://doi.org/10.1063/1.4798366 2024-03-28 21:34:38 +0900 Paper 2013 5 J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate die Applied Physics Letters 102 11 112910 https://doi.org/10.1063/1.4798289 2024-03-28 21:34:38 +0900 Paper 2013 6 Dequan Liu, Xi Wang, Xuebin Wang, Wei Tian, Jiangwei Liu, Chunyi Zhi, Deyan He, Yoshio Bando, Dmitri Golberg Ultrathin nanoporous Fe3O4–carbon nanosheets with enhanced supercapacitor performance Journal of Materials Chemistry A 1 6 1952 https://doi.org/10.1039/c2ta01035f 2024-03-28 21:34:38 +0900 Paper 2013 7 Gang He, Toyohiro Chikyow, Xiaoshuang Chen, Hanshuang Chen, Jiangwei Liu, Zhaoqi Sun Cathodoluminescence and field emission from GaN/MgAl2O4grown by metalorganic chemical vapor deposition: substrate-orientation dependence J. Mater. Chem. C 1 2 238 245 https://doi.org/10.1039/c2tc00012a 2024-03-28 21:34:38 +0900 Paper 2012 1 J. W. Liu, M. Y. Liao, M. Imura, Y. Koide Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond Applied Physics Letters 101 25 252108 https://doi.org/10.1063/1.4772985 2024-03-28 21:34:38 +0900