Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate

著者	Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide.
掲載誌名	physica status solidi (a) 214 [11] 1700463 ISSN: 18626319, 18626300, 00318965 ESIでのカテゴリ: PHYSICS
出版社	Wiley
発表年	2017
言語	English
DOI	https://doi.org/10.1002/pssa.201700463
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