Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate

Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide.

physica status solidi (a) 214 [11] 1700463. 2017.

https://doi.org/10.1002/pssa.201700463

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作成時刻: 2017-11-30 20:35:27 +0900更新時刻: 2024-10-05 05:20:41 +0900

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