HOME > Article > DetailDesign and optimizing of trench Schottky barrier-controlled β-Ga2O3 Schottky diode with low turn-on voltage and leakage currentYisong Shen, Qihao Zhang, Kai Xiao, Ning Xia, Hui Zhang, Dongyuan Zhai, Min He, Jiangwei Liu, Jiwu Lu. Micro and Nanostructures 168 207318. 2022.https://doi.org/10.1016/j.micrna.2022.207318 NIMS author(s)LIU, JiangweiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-11-09 03:23:07 +0900 Updated at: 2026-10-08 07:06:46 +0900