Electrical properties of hydrogenated diamond MOSFETs after annealing at 500 °C
30th International Conference on Diamond and Carbon Materials. 2019.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2019-09-18 03:00:18 +0900更新時刻: 2019-09-18 03:00:18 +0900