HOME > Presentation > DetailElectrical properties of hydrogenated diamond MOSFETs after annealing at 500 °CLIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo. 30th International Conference on Diamond and Carbon Materials. 2019.NIMS author(s)LIU, JiangweiOOSATO, HirotakaDA, BoTERAJI, TokuyukiKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-09-18 03:00:18 +0900Updated at: 2019-09-18 03:00:18 +0900