Electrical properties of H-terminated diamond field effect transistors with AlN gate material sputter-deposited under Ar+N2 atmosphere
The 77th JSAP Autumn Meeting, 2016. 2016.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-14 10:56:46 +0900更新時刻: 2017-07-10 22:29:25 +0900