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出版物原則として、2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Yuichi Ota, Masataka Imura, Ryan G Banal, Yasuo Koide. Natural band alignment of BAlN and BGaN alloys. Journal of Physics D: Applied Physics. 55 [45] (2022) 455102 10.1088/1361-6463/ac8fff
- Masataka Imura, Yuichi Ota, Ryan G. Banal, Meiyong Liao, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide. Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy. physica status solidi (a). 215 [21] (2018) 1800282 10.1002/pssa.201800282
- 井村 将隆, バナル ライアン, 廖 梅勇, 松元 隆夫, 熊本 明仁, 柴田 直哉, 幾原 雄一, 小出 康夫. 窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価. 日本結晶成長学会誌. 45 [1] (2018) 05-1-05-11 10.19009/jjacg.3-45-1-05
会議録
- IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). DIAMOND AND RELATED MATERIALS. (2017)
- IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Diamond and Related Materials. (2017)
口頭発表
- 太田優一, IMURA, Masataka, BANAL, Ganipan Ryan, KOIDE, Yasuo. Band alignment of wurtzite BN related alloys. International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018
- IMURA, Masataka, BANAL, Ganipan Ryan, NAGATA, Takahiro, YAMASHITA, Yoshiyuki, YANGAnli, YOSHIKAWA, Hideki, TSUDA, Shunsuke, KOIDE, Yasuo, 小林啓介, 山口智広, 金子昌充, 荒木努, 名西やすし. Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy. International Workshop on Nitride Semiconductors 2018 (IWN2018). 2018
- 太田優一, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. Electronic and optical properties of BAlN. International Workshop on UV Materials and Devices 2017. 2017
