HOME > 論文 > 書誌詳細Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporatorJ. W. Liu, H. Oosato, M. Y. Liao, Y. Koide. Applied Physics Letters 110 [20] 203502. 2017.https://doi.org/10.1063/1.4983091 NIMS著者劉 江偉大里 啓孝廖 梅勇小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻 :2017-06-06 01:52:17 +0900 更新時刻 :2024-03-29 22:25:07 +0900