Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator

J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide.

Applied Physics Letters 110 [20] 203502. 2017.

https://doi.org/10.1063/1.4983091

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作成時刻: 2017-06-06 01:52:17 +0900 更新時刻: 2025-06-13 04:49:15 +0900

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