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Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

Journal of Applied Physics 120 [11] 115307. 2016.

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    作成時刻 :2016-12-21 00:16:57 +0900 更新時刻 :2022-10-22 02:38:39 +0900

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