Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors | SAMURAI, NIMS Researchers Directory Service

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Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors

Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide.

Journal of Applied Physics 120 [11] 115307. 2016.

https://doi.org/10.1063/1.4962854

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-12-21 00:16:57 +0900 Updated at: 2026-09-30 05:33:04 +0900

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