Band offsets of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> oxides deposited by atomic layer deposition technique on hydrogenated diamond | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond
(Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond)

J. W. Liu, M. Y. Liao, M. Imura, Y. Koide.

Applied Physics Letters 101 [25] 252108. 2012.

https://doi.org/10.1063/1.4772985

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作成時刻: 2016-05-24 16:54:40 +0900更新時刻: 2024-03-31 15:05:35 +0900

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