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Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors
International Conference on Diamond and Carbon Materials 2016. September 04, 2016-September 08, 2016.
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Created at: 2017-01-08 03:45:36 +0900 Updated at: 2017-07-10 22:29:24 +0900