HOME > 論文 > 書誌詳細Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °CJ-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. Journal of Physics D: Applied Physics 52 [31] 315104. 2019.https://doi.org/10.1088/1361-6463/ab1e31 NIMS著者劉 江偉大里 啓孝達 博寺地 徳之小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-06-20 03:00:16 +0900更新時刻: 2024-04-02 01:42:10 +0900
