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Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C

J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide.

Journal of Physics D: Applied Physics 52 [31] 315104. 2019.

https://doi.org/10.1088/1361-6463/ab1e31

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Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2019-06-20 03:00:16 +0900Updated at: 2024-04-02 01:42:10 +0900

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