High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Qihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu.

Journal of Alloys and Compounds 939 168732. 2023.

https://doi.org/10.1016/j.jallcom.2023.168732

Open Access Elsevier BV (Publisher) Materials Data Repository (MDR)

NIMS著者

劉江偉

Materials Data Repository (MDR)上の本文・データセット

MDRavailable High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

作成時刻: 2023-02-03 03:35:10 +0900 更新時刻: 2025-06-22 05:29:08 +0900

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