HOME > 論文 > 書誌詳細High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layerQihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu. Journal of Alloys and Compounds 939 168732. 2023.https://doi.org/10.1016/j.jallcom.2023.168732 NIMS著者劉 江偉Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-02-03 03:35:10 +0900更新時刻: 2024-04-02 05:32:21 +0900
