High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer | SAMURAI, NIMS Researchers Directory Service

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High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Qihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu.

Journal of Alloys and Compounds 939 168732. 2023.

https://doi.org/10.1016/j.jallcom.2023.168732

Open Access Elsevier BV (Publisher) Materials Data Repository (MDR)

NIMS author(s)

LIU, Jiangwei

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer

Created at: 2023-02-03 03:35:10 +0900 Updated at: 2026-03-01 07:07:15 +0900

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