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LIU, Jiangwei

LIU, Jiangwei (劉 江偉) 0000-0003-2580-7401

Address
305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]

[Research papers] | [Books] | [Proceedings] | [Presentations] | [Misc] | [Published patent applications]

Research papers TSV

2024
  1. 劉 江偉, 寺地 徳之, 達 博, 小出 康夫. ホウ素ドープダイヤモンド金属-酸化膜-半導体電界効果トランジスタ. NEW DIAMOND 誌 . 40 [1] (2024) 19-21
  2. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Suppression of High Threshold Voltage for Boron-Doped Diamond MOSFETs. IEEE Transactions on Electron Devices. 71 [3] (2024) 1764-1768 10.1109/ted.2024.3356468 Open Access
  3. J. W. Liu, T. Teraji, B. Da, Y. Koide. Electrical property improvement for boron-doped diamond metal–oxide–semiconductor field-effect transistors. Applied Physics Letters. 124 [7] (2024) 072103 10.1063/5.0194424
2023
  1. Bo Da, Long Cheng, Xun Liu, Kunji Shigeto, Kazuhito Tsukagoshi, Toshihide Nabatame, Zejun Ding, Yang Sun, Jin Hu, Jiangwei Liu, Daiming Tang, Han Zhang, Zhaoshun Gao, Hongxuan Guo, Hideki Yoshikawa, Shigeo Tanuma. Cylindrically symmetric rotating crystals observed in crystallization process of InSiO film. Science and Technology of Advanced Materials: Methods. 3 [1] (2023) 2230870 10.1080/27660400.2023.2230870 Open Access
  2. Jiangwei Liu, Masayuki Okamura, Hisanori Mashiko, Masataka Imura, Meiyong Liao, Ryosuke Kikuchi, Michio Suzuka, Yasuo Koide. Experimental Formation and Mechanism Study for Super-High Dielectric Constant AlOx/TiOy Nanolaminates. Nanomaterials. 13 [7] (2023) 1256 10.3390/nano13071256 Open Access
  3. Xiaolu Yuan, Jinlong Liu, Jiangwei Liu, Junjun Wei, Liangxian Chen, Chengming Li. The graphene-on-diamond structure with Ni-catalyzed under high temperature. Science Talks. 8 (2023) 100277 10.1016/j.sctalk.2023.100277 Open Access
  4. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition. IEEE Transactions on Electron Devices. 70 [5] (2023) 2199-2203 10.1109/ted.2023.3256349 Open Access
  5. Qihao Zhang, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu. High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer. Journal of Alloys and Compounds. 939 (2023) 168732 10.1016/j.jallcom.2023.168732
  6. Bo He, Gang He, Shanshan Jiang, Jiangwei Liu, Elvira Fortunato, Rodrigo Martins. Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture. Advanced Electronic Materials. 9 [2] (2023) 2201007 10.1002/aelm.202201007 Open Access
2022
  1. Qihao Zhang, Yisong Shen, Jiangwei Liu, Chunming Tu, Dongyuan Zhai, Min He, Jiwu Lu. Low Interface Trapped Charge Density for AlO/β-GaO (001) Metal-Insulator-Semiconductor Capacitor . IEEE Journal of the Electron Devices Society. 10 (2022) 942-946 10.1109/jeds.2022.3214000 Open Access
  2. B. Da, X. Liu, J.M. Gong, Z.H. Zhang, Z.J. Ding, N.T. Cuong, J. Hu, J.W. Liu, Z.S. Gao, H.X. Guo, H.X. Wang, H. Zhang, Y. Harada, H. Yoshikawa, S. Tanuma. Emitted secondary Electrons: In vacuo plasmon energy gain observation using a Three-Point probe method. Applied Surface Science. 596 (2022) 153616 10.1016/j.apsusc.2022.153616
  3. Yisong Shen, Qihao Zhang, Kai Xiao, Ning Xia, Hui Zhang, Dongyuan Zhai, Min He, Jiangwei Liu, Jiwu Lu. Design and optimizing of trench Schottky barrier-controlled β-Ga2O3 Schottky diode with low turn-on voltage and leakage current. Micro and Nanostructures. 168 (2022) 207318 10.1016/j.micrna.2022.207318
  4. B. Da, X. Liu, L. H. Yang, J. M. Gong, Z. J. Ding, H. Shinotsuka, J. W. Liu, H. Yoshikawa, S. Tanuma. Evaluation of dielectric function models for calculation of electron inelastic mean free path. Journal of Applied Physics. 131 [17] (2022) 10.1063/5.0085984 Open Access
  5. Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. IEEE Transactions on Electron Devices. 69 [3] (2022) 1181-1185 10.1109/ted.2022.3140699
2021
  1. Z.J. Ding, Chao Li, Bo Da, Jiangwei Liu. Charging effect induced by electron beam irradiation: a review. Science and Technology of Advanced Materials. 22 [1] (2021) 932-971 10.1080/14686996.2021.1976597 Open Access
  2. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Boron-Doped Diamond MOSFETs With High Output Current and Extrinsic Transconductance. IEEE Transactions on Electron Devices. 68 [8] (2021) 3963-3967 10.1109/ted.2021.3087115
  3. Dabao Lu, Keisuke Goto, Bo Da, Jiangwei Liu, Hideki Yoshikawa, Shigeo Tanuma, Z.J. Ding. Secondary electron-, Auger electron- and reflected electron-spectroscopy study on sp2-hybridization carbon materials: HOPG, carbon glass and carbon fiber. Journal of Electron Spectroscopy and Related Phenomena. 250 (2021) 147086 10.1016/j.elspec.2021.147086
  4. Xiaolu Yuan, Jiangwei Liu, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide. Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C. Coatings. 11 [4] (2021) 470 10.3390/coatings11040470 Open Access
  5. L. H. Yang, B. Da, H. Yoshikawa, S. Tanuma, J. Hu, J. W. Liu, D. M. Tang, Z. J. Ding. Low-energy electron inelastic mean free path and elastic mean free path of graphene. Applied Physics Letters. 118 [5] (2021) 053104 10.1063/5.0029133
  6. Jiangwei Liu, Orlando Auciello, Elida de Obaldia, Bo Da, Yasuo Koide. Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs. Carbon. 172 (2021) 112-121 10.1016/j.carbon.2020.10.031
2020
  1. Qihao Zhang, Jiwu Lu, Dongyuan Zhai, Jing Xiao, Min He, Jiangwei Liu. Electrical Properties of Al2O3/ZnO Metal–Insulator–Semiconductor Capacitors. IEEE Transactions on Electron Devices. 67 [11] (2020) 5033-5038 10.1109/ted.2020.3021369
  2. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Hirotaka Ohsato, Yasuo Koide. Effect of Annealing Temperature on Performances of Boron-Doped Diamond Metal–Semiconductor Field-Effect Transistors. IEEE Transactions on Electron Devices. 67 [4] (2020) 1680-1685 10.1109/ted.2020.2972979
  3. Bo Da, Lihao Yang, Jiangwei Liu, Yonggang Li, Shifeng Mao, Zejun Ding. Monte Carlo simulation study of reflection electron energy loss spectroscopy of an Fe/Si overlayer sample. Surface and Interface Analysis. 52 [11] (2020) 742-754 10.1002/sia.6864
  4. J. W. Liu, H. Oosato, B. Da, Y. Koide. Fixed charges investigation in Al2O3/hydrogenated-diamond metal-oxide-semiconductor capacitors. Applied Physics Letters. 117 [16] (2020) 163502 10.1063/5.0023086
  5. Rui Lu, Jiwu Lu, Ping Liu, Min He, Jiangwei Liu. Design of the VRLA Battery Real-Time Monitoring System Based on Wireless Communication. Sensors. 20 [15] (2020) 4350 10.3390/s20154350 Open Access
  6. Die Wang, Gang He, Lin Hao, Lesheng Qiao, Zebo Fang, Jiangwei Liu. Interface Chemistry and Dielectric Optimization of TMA-Passivated high-k/Ge Gate Stacks by ALD-Driven Laminated Interlayers. ACS Applied Materials & Interfaces. 12 [22] (2020) 25390-25399 10.1021/acsami.0c02963
  7. Krishna Pandey, Rabindra Basnet, Aaron Wegner, Gokul Acharya, Md Rafique Un Nabi, Jiangwei Liu, Jian Wang, Y. K. Takahashi, Bo Da, Jin Hu. Electronic and magnetic properties of the topological semimetal candidate NdSbTe. Physical Review B. 101 [23] (2020) 235161 10.1103/physrevb.101.235161
  8. Yan-zhao Guo, Jin-long Liu, Jiang-wei Liu, Yu-ting Zheng, Yun Zhao, Xiao-lu Yuan, Zi-hao Guo, Li-fu Hei, Liang-xian Chen, Jun-jun Wei, Jian-peng Xing, Cheng-ming Li. Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition. International Journal of Minerals, Metallurgy and Materials. 27 [5] (2020) 703-712 10.1007/s12613-019-1944-0
  9. Xiaolu Yuan, Jiangwei Liu, Siwu Shao, Jinlong Liu, Junjun Wei, Bo Da, Chengming Li, Yasuo Koide. Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond. AIP Advances. 10 [5] (2020) 055114 10.1063/5.0008167 Open Access
  10. Bo Da, Yang Sun, Zhufeng Hou, Jiangwei Liu, Nguyen Thanh Cuong, Kazuhito Tsukagoshi, Hideki Yoshikawa, Shigeo Tanuma, Jin Hu, Zhaoshun Gao, Zejun Ding. Measurement of the Low-Energy Electron Inelastic Mean Free Path in Monolayer Graphene. Physical Review Applied. 13 [4] (2020) 044055 10.1103/physrevapplied.13.044055 Open Access
2019
  1. Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. High Current Output Hydrogenated Diamond Triple-Gate MOSFETs. IEEE Journal of the Electron Devices Society. 7 (2019) 561-565 10.1109/jeds.2019.2915250 Open Access
  2. Jiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. High Output Current Boron-Doped Diamond Metal-Semiconductor Field-Effect Transistors. IEEE Electron Device Letters. 40 [11] (2019) 1748-1751 10.1109/led.2019.2942967
  3. Bo Da, Jiangwei Liu, Yoshitomo Harada, Nguyen T. Cuong, Kazuhito Tsukagoshi, Jin Hu, Lihao Yang, Zejun Ding, Hideki Yoshikawa, Shigeo Tanuma. Observation of Plasmon Energy Gain for Emitted Secondary Electron in Vacuo. The Journal of Physical Chemistry Letters. 10 [19] (2019) 5770-5775 10.1021/acs.jpclett.9b02135 Open Access
  4. Xiao-lu Yuan, Yu-ting Zheng, Xiao-hua Zhu, Jin-long Liu, Jiang-wei Liu, Cheng-ming Li, Peng Jin, Zhan-guo Wang. Recent progress in diamond-based MOSFETs. International Journal of Minerals, Metallurgy, and Materials. 26 [10] (2019) 1195-1205 10.1007/s12613-019-1843-4
  5. J-W Liu, H Oosato, B Da, T Teraji, A Kobayashi, H Fujioka, Y Koide. Operations of hydrogenated diamond metal–oxide–semiconductor field-effect transistors after annealing at 500 °C. Journal of Physics D: Applied Physics. 52 [31] (2019) 315104 10.1088/1361-6463/ab1e31
2018
  1. LIU, Jiangwei. An overview of high-k oxides on hydrogenated-diamond for metal-oxide-semiconductor capacitors and field-effect transistors. SENSORS. 18 [6] (2018) 813-1-813-17 10.3390/s18060813
  2. ウー クウンピン, 廖 梅勇, サン リウエン, 劉 江偉, 井村 将隆, Haitao Ye, 小出 康夫. A density functional study of the effect of hydrogen on electronic properties and band discontinuity at anatase TiO2/diamond interface. Journal of Applied Physics. 123 [16] (2018) 161599 10.1063/1.5002176
  3. J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide. Annealing effects on hydrogenated diamond NOR logic circuits. Applied Physics Letters. 112 [15] (2018) 153501 10.1063/1.5022590
2017
  1. Ryan G. Banal, Masataka Imura, Hirohito Ohata, Meiyong Liao, Jiangwei Liu, Yasuo Koide. Effect of Sputter Deposition Atmosphere of AlN on the Electrical Properties of Hydrogen-Terminated Diamond Field Effect Transistor with AlN/Al2 O3 Stack Gate. physica status solidi (a). 214 [11] (2017) 1700463 10.1002/pssa.201700463
  2. Jiangwei Liu, Hirotaka Ohsato, Meiyong Liao, Masataka Imura, Eiichiro Watanabe, Yasuo Koide. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors. IEEE Electron Device Letters. 38 [7] (2017) 922-925 10.1109/led.2017.2702744
  3. J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide. Deposition of TiO2/Al2O3 bilayer on hydrogenated diamond for electronic devices: Capacitors, field-effect transistors, and logic inverters. Journal of Applied Physics. 121 [22] (2017) 224502 10.1063/1.4985066
  4. Bo Da, Jiangwei Liu, Mahito Yamamoto, Yoshihiro Ueda, Kazuyuki Watanabe, Nguyen Thanh Cuong, Songlin Li, Kazuhito Tsukagoshi, Hideki Yoshikawa, Hideo Iwai, Shigeo Tanuma, Hongxuan Guo, Zhaoshun Gao, Xia Sun, Zejun Ding. Virtual substrate method for nanomaterials characterization. Nature Communications. 8 (2017) 15629 10.1038/ncomms15629 Open Access
  5. J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide. Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator. Applied Physics Letters. 110 [20] (2017) 203502 10.1063/1.4983091
  6. Yijun Yang, Dai-Ming Tang, Chao Zhang, Yihui Zhang, Qifeng Liang, Shimou Chen, Qunhong Weng, Min Zhou, Yanming Xue, Jiangwei Liu, Jinghua Wu, Qiu Hong Cui, Chao Lian, Guolin Hou, Fangli Yuan, Yoshio Bando, Dmitri Golberg, Xi Wang. “Protrusions” or “holes” in graphene: which is the better choice for sodium ion storage?. Energy & Environmental Science. 10 [4] (2017) 979-986 10.1039/c7ee00329c
  7. Jiangwei Liu, Yasuo Koide. Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors. BIOSENSORS AND BIODETECTION. 1572 (2017) 217-232 10.1007/978-1-4939-6911-1_15
  8. Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, Yasuo Koide. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel. Journal of Applied Physics. 121 [2] (2017) 025702 10.1063/1.4972979
2016
  1. Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, Yasuo Koide. Design and fabrication of high-performance diamond triple-gate field-effect transistors. Scientific Reports. 6 [1] (2016) 34757 10.1038/srep34757 Open Access
  2. Elisseos Verveniotis, Yuji Okawa, Marina V. Makarova, Yasuo Koide, Jiangwei Liu, Břetislav Šmíd, Kenji Watanabe, Takashi Taniguchi, Katsuyoshi Komatsu, Takeo Minari, Xuying Liu, Christian Joachim, Masakazu Aono. Self-assembling diacetylene molecules on atomically flat insulators. Physical Chemistry Chemical Physics. 18 [46] (2016) 31600-31605 10.1039/c6cp06749b Open Access
  3. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors. Journal of Applied Physics. 120 [12] (2016) 124504 10.1063/1.4962851
  4. Ryan G. Banal, Masataka Imura, Jiangwei Liu, Yasuo Koide. Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors. Journal of Applied Physics. 120 [11] (2016) 115307 10.1063/1.4962854
  5. F.N. Li, J.W. Liu, J.W. Zhang, X.L. Wang, W. Wang, Z.C. Liu, H.X. Wang. Measurement of barrier height of Pd on diamond (100) surface by X-ray photoelectron spectroscopy. Applied Surface Science. 370 (2016) 496-500 10.1016/j.apsusc.2016.02.189
  6. Chao Zhang, Xi Wang, Qifeng Liang, Xizheng Liu, Qunhong Weng, Jiangwei Liu, Yijun Yang, Zhonghua Dai, Kejian Ding, Yoshio Bando, Jie Tang, Dmitri Golberg. Atomic-Scale Structure and Local Chemistry of CoFeB–MgO Magnetic Tunnel Junctions. Nano Letters. 16 [3] (2016) 1530-1536 10.1021/acs.nanolett.6b00057
  7. Jing Zhao, Jiangwei Liu, Liwen Sang, Meiyong Liao, David Coathup, Masataka Imura, Baogui Shi, Changzhi Gu, Yasuo Koide, Haitao Ye. Assembly of a high-dielectric constant thin TiOx layer directly on H-terminated semiconductor diamond. Applied Physics Letters. 108 [1] (2016) 012105 10.1063/1.4939650
2015
  1. J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, Y. Koide. Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors. Journal of Applied Physics. 118 [11] (2015) 115704 10.1063/1.4930294
  2. Jiangwei Liu, Meiyong Liao, Masataka Imura, Akihiro Tanaka, Hideo Iwai, Yasuo Koide. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric. Scientific Reports. 4 [1] (2015) 6395 10.1038/srep06395 Open Access
  3. Xi Wang, Dequan Liu, Qunhong Weng, Jiangwei Liu, Qifeng Liang, Chao Zhang. Cu/Li4Ti5O12 scaffolds as superior anodes for lithium-ion batteries. NPG Asia Materials. 7 [4] (2015) e171 10.1038/am.2015.23 Open Access
  4. Jiangwei Liu, Meiyong Liao, Masataka Imura, Hirotaka Oosato, Eiichiro Watanabe, Yasuo Koide. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond. Diamond and Related Materials. 54 (2015) 55-58 10.1016/j.diamond.2014.10.004
  5. Meiyong Liao, Jiangwei Liu, Liwen Sang, David Coathup, Jiangling Li, Masataka Imura, Yasuo Koide, Haitao Ye. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures. Applied Physics Letters. 106 [8] (2015) 083506 10.1063/1.4913597
2014
  1. J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide. Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor. Applied Physics Letters. 105 [8] (2014) 082110 10.1063/1.4894291
  2. Xi Wang, Zhenhua Chen, Dequan Liu, Wei Tian, Qi Wang, Chao Zhang, Jiangwei Liu, Liyuan Han, Yoshio Bando, Dmitri Golberg. Triple-Yolked ZnO/CdS Hollow Spheres for Semiconductor-Sensitized Solar Cells. Particle & Particle Systems Characterization. 31 [7] (2014) 757-762 10.1002/ppsc.201300365
  3. J-W Liu, M-Y Liao, M Imura, E Watanabe, H Oosato, Y Koide. Diamond field effect transistors with a high-dielectric constant Ta2O5as gate material. Journal of Physics D: Applied Physics. 47 [24] (2014) 245102 10.1088/0022-3727/47/24/245102
  4. Chao Zhang, Wei Tian, Zhi Xu, Xi Wang, Jiangwei Liu, Song-Lin Li, Dai-Ming Tang, Dequan Liu, Meiyong Liao, Yoshio Bando, Dmitri Golberg. Photosensing performance of branched CdS/ZnO heterostructures as revealed by in situ TEM and photodetector tests. Nanoscale. 6 [14] (2014) 8084 10.1039/c4nr00963k
  5. Gang He, Jiangwei Liu, Hanshuang Chen, Yanmei Liu, Zhaoqi Sun, Xiaoshuang Chen, Mao Liu, Lide Zhang. Interface control and modification of band alignment and electrical properties of HfTiO/GaAs gate stacks by nitrogen incorporation. J. Mater. Chem. C. 2 [27] (2014) 5299-5308 10.1039/c4tc00572d
  6. Wei Tian, Chao Zhang, Tianyou Zhai, Song-Lin Li, Xi Wang, Jiangwei Liu, Xiao Jie, Dequan Liu, Meiyong Liao, Yasuo Koide, Dmitri Golberg, Yoshio Bando. Flexible Ultraviolet Photodetectors with Broad Photoresponse Based on Branched ZnS-ZnO Heterostructure Nanofilms. ADVANCED MATERIALS. 26 [19] (2014) 3088-3093 10.1002/adma.201305457
2013
  1. Jiangwei Liu, Shaoheng Cheng, Meiyong Liao, Masataka Imura, Akihiro Tanaka, Hideo Iwai, Yasuo Koide. Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy. Diamond and Related Materials. 38 (2013) 24-27 10.1016/j.diamond.2013.06.005
  2. J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide. Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors. Journal of Applied Physics. 114 [8] (2013) 084108 10.1063/1.4819108
  3. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. Normally-off HfO2-gated diamond field effect transistors. Applied Physics Letters. 103 [9] (2013) 092905 10.1063/1.4820143
  4. J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, Y. Koide. Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction. Journal of Applied Physics. 113 [12] (2013) 123706 10.1063/1.4798366
  5. J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide. Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric. Applied Physics Letters. 102 [11] (2013) 112910 10.1063/1.4798289
  6. Dequan Liu, Xi Wang, Xuebin Wang, Wei Tian, Jiangwei Liu, Chunyi Zhi, Deyan He, Yoshio Bando, Dmitri Golberg. Ultrathin nanoporous Fe3O4–carbon nanosheets with enhanced supercapacitor performance. Journal of Materials Chemistry A. 1 [6] (2013) 1952 10.1039/c2ta01035f
  7. Gang He, Toyohiro Chikyow, Xiaoshuang Chen, Hanshuang Chen, Jiangwei Liu, Zhaoqi Sun. Cathodoluminescence and field emission from GaN/MgAl2O4grown by metalorganic chemical vapor deposition: substrate-orientation dependence. J. Mater. Chem. C. 1 [2] (2013) 238-245 10.1039/c2tc00012a
2012
  1. J. W. Liu, M. Y. Liao, M. Imura, Y. Koide. Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond. Applied Physics Letters. 101 [25] (2012) 252108 10.1063/1.4772985

Books TSV

Proceedings TSV

2023
  1. Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide. Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on a Large-Area Wafer. 2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT). (2023) 10.1109/iceict57916.2023.10245613
2017
  1. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Diamond and Related Materials. (2017)
  2. IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). DIAMOND AND RELATED MATERIALS. (2017)

Presentations TSV

2024
  1. 劉 江偉, 寺地 徳之, 達 博, 小出 康夫. ホウ素ドープダイヤモンド金属酸化物半導体界面効果トランジスタ. 2024年第71回応用物理学会春季学術講演会. 2024
  2. LIU, Jiangwei, 岡村 雅之, 増子 尚徳, IMURA, Masataka, LIAO, Meiyong, 菊地　諒介, 鈴鹿　みちお, KOIDE, Yasuo. Super-High Dielectric Constant AlOx/TiOy Nanolaminates: Formation and Mechanism Discussion. STAC - D2MatE 2024. 2024
2023
  1. DA, Bo, LIU, Jiangwei, KOHARA, Shinji, YOSHIKAWA, Hideki, TANUMA, Shigeo. Cylindrically symmetric rotating crystals observed in crystallization process of InSiO film. 6th International Symposium on Advanced Inorganic Materials. 2023 Invited
  2. LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo. High Thermal Stability for Boron-Doped Diamond Field-Effect Transistors. NIMS Award Symposium 2023. 2023
  3. DA, Bo, LIU, Jiangwei, KOHARA, Shinji, YOSHIKAWA, Hideki, TANUMA, Shigeo. Simulation of diffractive electron lenses using Monte Carlo method. Symposium on Practical Surface Analysis 2023　(PSA-23). 2023
  4. DA, Bo, LIU, Jiangwei, KOHARA, Shinji, YOSHIKAWA, Hideki, TANUMA, Shigeo. Diffractive electron lenses: using thin film materials to focus electron beams. The 14th International Vacuum Electron Sources Conference (IVESC 2023). 2023
  5. LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo. Boron-doped diamond MOSFETs. 第84回応用物理学会秋季学術講演会. 2023
  6. LIU, Jiangwei. p-type hydrogen-terminated diamond-based MOSFET logic circuits. International Conference on Materials Science, Engineering and Technology. 2023 Invited
  7. LIU, Jiangwei, 岡村 雅之, 増子 尚徳, IMURA, Masataka, LIAO, Meiyong, 菊地　諒介, 鈴鹿　みちお, KOIDE, Yasuo. Deposition and mechanism study for super-high dielectric constant AlOx/TiOy nanolaminates. 6th International Conference on MATERIALS SCIENCE & NANOTECHNOLOGY. 2023 Invited
  8. Orlando Auciello, Geunhee Lee, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo, Abel Hurtado-Macías. MATERIALS SCIENCE AND DEVICE TECHNOLOGY DEVELOPMENT FOR INTERFACEENGINEERED SUPER HIGH-K DIELECTRIC NANOLAMINATE-BASED OXIDES / CRYSTALLINE DIAMOND FOR NEW GENERATION HIGH POWER ELECTRONICS. 31st International Materials Research Congress 2023. 2023
  9. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Diamond Metal-Oxide-Semiconductor Field-effect Transistors on a Large-area Wafer. 2023 IEEE 6th International Conference on Electronic Information and Communication Technology (ICEICT 2023). 2023 Invited
  10. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. Heuristic data-driven spectral analysis for nanomaterial information embed in the background. Chinese Materials Conference 2022-2023. 2023 Invited
  11. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Discussion on resistances in hydrogen-terminated diamond MOSFETs. International Conference on New Diamond and Nano Carbons (NDNC) 2023. 2023
  12. LIU, Jiangwei, TERAJI, Tokuyuki, DA, Bo, KOIDE, Yasuo. Boron-doped diamond MOSFETs with high output current and extrinsic transconductance. International Conference on New Diamond and Nano Carbons (NDNC) 2023. 2023
  13. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. White electron beam technique in electron-beam based techniques. Surface Analysis Technology Conference　2023第四届表面分析技術研討会. 2023 Invited
2022
  1. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. Data-driven information extraction of passivation layers in stainless steel from electron microscopy. International Conference on the Cooperation and Integration of Industry, Education, Research and Application 2022 — Metal-based New Materials and Advanced Manufacturing Technology Subforum (ICIERA-2022). 2022 Invited
  2. LIU, Jiangwei, KOIDE, Yasuo. Diamond logic circuits consisting of depletion-mode and enhancement-mode MOSFETs. The 12th Global Conference on Materials Science and Engineering (CMSE 2023). 2022 Invited
  3. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Resistance clarification in hydrogen-terminated diamond MOSFETs. 2022年（令和4年）応用物理学会　秋季学術講演会. 2022
  4. ゲン ショウル, Jinlong Liu, LIU, Jiangwei, Junjun Wei, Liangxian Chen, Chengming Li. The graphene-on-diamond structure with Ni-catalyzed under high temperature. 32nd International Conference on Diamond and Carbon Materials. 2022
  5. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-Terminated Diamond MOSFETs. 9th International Symposium on Control of Semiconductor Interfaces (ISCSI-Ⅸ) http://iscsi9.org/. 2022
  6. LIU, Jiangwei, チョウ チゴウ, Dongyuan Zhai, Jiwu Lu. Long-term annealing effects of Ti/Au bilayer on unintentionally doped ZnO: Specific contact resistivity and surface resistance. International Conference on Materials Science, Engineering & Technology https://msiconference.com/france-2022/?%5D=. 2022
  7. LIU, Jiangwei. Development of single-crystalline ZnO-based Metal-Insulator-Semiconductor Capacitors. International Conference on Materials Science, Engineering & Technology https://msiconference.com/france-2022/?%5D=. 2022 Invited
  8. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Investigation of Ohmic Contact Resistance, Surface Resistance, and Channel Resistance for Hydrogen-terminated Diamond MOSFETs. 15th International Conference on New Diamond and Nano Carbons 2022 https://www.ndnc2022.org/. 2022
  9. ゲン ショウル, Jinlong Liu, LIU, Jiangwei, Junjun Wei, Liangxian Chen, Chengming Li. The Graphene-on-diamond MOSFET with V-shaped Transfer Curves. 15th International Conference on New Diamond and Nano Carbons (NDNC2022). 2022
2021
  1. 劉 江偉, Orlando Auciello, Elida de Obaldia, 達 博, 小出 康夫. Super high-dielectric constant Al2O3/TiO2 nanolaminates deposited by the atomic layer deposition technique (for diamond MOSFETs). マテリアル先端リサーチインフラ　オンラインセミナー 『原子層堆積技術（ALD）による成膜技術』. 2021
  2. 劉 江偉. Development of diamond MOSFET logic circuits. International conference on Carbon Chemistry and Materials. 2021 Invited
  3. 劉 江偉, Orlando Auciello, Elida de Obaldia, 達 博, 小出 康夫. An AlOx/TiOy nanolaminate on hydrogenated diamond for metal-oxide-semiconductor electronic devices. 14th International Conference on New Diamond and Nano Carbons (NDNC) 2020. 2021
  4. 劉 江偉, 大里 啓孝, 達 博, 小出 康夫. Triple-gate fin-type hydrogenated diamond MOSFETs. 14th International Conference on New Diamond and Nano Carbons (NDNC) 2020. 2021
  5. 劉 江偉, Elida de Obaldia, 達 博, 小出 康夫, Orlando Auciello. Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for Transformational Nanoelectronics. IEEE 2021 ISAF-ISIF-PFM Joint Conference. 2021
  6. Orlando Auciello, 劉 江偉, Elida de Obaldia, 達 博, 小出 康夫. Science and Technology of Integrated Super-High Dielectric Constant AlOx/TiOy Nanolaminates / Diamond for MOS Capacitors and MOSFETs. 2021 MRS Spring Meeting & Exhibit https://www.mrs.org/meetings-events/spring-meetings-exhibits/2021-mrs-spring-meeting/call-for-papers/symposium-sessions-detail?code=EL04. 2021
  7. 小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇. Ⅲ族窒化物ナノラミネート特異構造を用いたダイヤモンド電子デバイスの開発. 第68回応用物理学会春季学術講演会. 2021 Invited
  8. 劉 江偉, 大里 啓孝, 達 博, 寺地 徳之, 小林 篤, 藤岡 洋, 小出 康夫. Operations of hydrogenated diamond MOSFETs after high-temperature annealing. The 8th Asian Conference on Crystal Growth and Crystal Technology. 2021
  9. 小出 康夫, 劉 江偉, 達 博, Orlando Auciello, Elida de Obaldia. Diamond MOSFETs with a super-high dielectric constant AlOx/TiOx nanolaminate insulator. The 8th Asian Conference on Crystal Growth and Crystal Technology On-Line Conference. 2021 Invited
  10. 劉 江偉, 寺地 徳之, 達 博, 大里 啓孝, 小出 康夫. Development of Boron-Doping Diamond-Based Metal-Semiconductor Field-Effect Transistors . MANA INTERNATIONAL SYMPOSIUM 2021 jointly with ICYS. 2021
  11. 劉 江偉, 寺地 徳之, 達 博, 小出 康夫. High output current boron-doped diamond MESFETs. Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity. 2021
  12. 小出 康夫, 井村 将隆, 劉 江偉, 廖 梅勇. Challenge to development of III-nitride Nanolaminates/Diamond Heterojunction devices. Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity. 2021 Invited
  13. Orlando Auciello, 劉 江偉, 小出 康夫, Elida de Obaldia. Science and Technology of Integrated Multifunctional Super High-K Dielectric Oxide Nanolaminates / Diamond for New Generation High Power Electronics. Virtual Workshop on Materials Science and Advanced Electronics Created by Singularity https://tokui.symposium-hp.jp/. 2021 Invited
2020
  1. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. Data-driven spectral analysis method in electron-beam based techniques. 2020年日本表面真空学会学術講演会. 2020
  2. Orlando Auciello, LIU, Jiangwei, KOIDE, Yasuo, Elida de Obaldia, DA, Bo. Science/Technology of Interface-Engineered Super High-K Dielectric TiOx/AlOy Nanolaminate/Crystal Diamond for New Generation High Power Electronics. Second Workshop on Diamond Electronics https://www.egr.msu.edu/swde2020/home. 2020
  3. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Diamond Nano-/Micro-Fin Channels for Metal-Oxide-Semiconductor Field-Effect Transistors. The 13th MANA International Symposium 2020 jointly with ICYS. 2020
2019
  1. LIU, Jiangwei, DA, Bo, YOSHIKAWA, Hideki, TANUMA, Shigeo. Data-driven spectral analysis method in electron-beam based techniques. TIAかけはし「-計算と計測のデータ同化による革新的物質材料解析手法の調査-」. 2019
  2. LIU, Jiangwei, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo. Development of boron-doped diamond metal-semiconductor field-effect transistors. 第33回ダイヤモンドシンポジウム. 2019
  3. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. White-beam electron technique for nanomaterial characterization. PSA19. 2019
  4. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. Characterization of nanomaterials with secondary electron microscopy. ALC19. 2019
  5. DA, Bo, LIU, Jiangwei, YOSHIKAWA, Hideki, TANUMA, Shigeo. Virtual substrate method for nanomaterials characterization. ECASIA19. 2019
  6. LIU, Jiangwei, KOIDE, Yasuo. High current output T-type and triple-gate hydrogenated diamond MOSFETs. 30th International Conference on Diamond and Carbon Materials. 2019
  7. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo. Electrical properties of hydrogenated diamond MOSFETs after annealing at 500 °C. 30th International Conference on Diamond and Carbon Materials. 2019
  8. Orlando Auciello, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo. Science/Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics. 7th International Symposium on Integrated Functionalities. 2019
  9. LIU, Jiangwei. High current output T-type and triple-gate fin-type hydrogenated diamond MOSFETs. 2019 International Symposium on Single Crystal Diamond and Electronics(SCDE 2019). 2019 Invited
  10. Orlando Auciello, Elida de Obaldia, LIU, Jiangwei, KOIDE, Yasuo, Geunhee Lee. Science and Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics. 13th New Diamond and Nano Carbon Conference(NDNC 2019). 2019 Invited
  11. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. Development of hydrogenated diamond triple-gate fin-type MOSFETs. 第66回応用物理学会 春季学術講演会. 2019
  12. LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, TERAJI, Tokuyuki, KOIDE, Yasuo. Operations of Hydrogenated Diamond MOSFETs After Annealing at 500 °C. MANA International Symposium 2019. 2019
2018
  1. 劉 江偉, 小出 康夫. Depletion-/enhancement-mode hydrogenated-diamond MOSFETs and MOSFET logic circuits. E-MRS & MRS-J BILATERAL SYMPOSIUM. 2018 Invited
  2. 小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇. High-quality diamond epitaxial layer growth and electron devices application. SSDM2018. 2018 Invited
  3. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Enhancement-mode hydrogenated diamond MOSFETs. 29th International Conference on Diamond and Carbon Materials. 2018 Invited
  4. 達 博, ホー ズーフォン, 劉 江偉, 吉川 英樹, 田沼 繁夫, zjding. Virtual Substrate Method for Nanomaterials Characterization. MPS-2018. 2018 Invited
  5. 小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇. D/EモードダイヤモンドMOSFETを用いた論理回路. 12th New Diamond and Nano Carbons Conference NDNC2018. 2018
  6. 劉 江偉. Development of diamond MOSFET logic circuits. 半導体表面化学セミナー（東京大学尾嶋研セミナー）. 2018 Invited
  7. 達 博, ホー ズーフォン, 劉 江偉, 吉川 英樹, 田沼 繁夫. Data-driven analysis method. MI・計測　合同シンポジウム. 2018
  8. 劉 江偉, 小出 康夫. ダイヤモンド論理回路チップの開発. SATテクノロジーショーケース2018. 2018
2017
  1. 劉 江偉. Diamond NOT and NOR logic circuits composed of enhancement-mode and depletion-mode MOSFETs. 第二屆海峽両岸金剛石薄膜及功能器件研討會. 2017 Invited
  2. 劉 江偉, 小出 康夫. ダイヤモンドMOSFET論理回路の開発. NIMS WEEK 2017. 2017
  3. 劉 江偉. Semiconductor diamond-based MOS electronic devices. 4th Annual Global Congress of Knowledge Economy-2017. 2017 Invited
  4. 小出 康夫, 劉 江偉, 廖 梅勇, 井村 将隆. Normally-on/off control of diamond FETs and logic circuit demonstration. The 2017 E-MRS Fall Meeting and Exhibit. 2017 Invited
  5. 劉 江偉. Diamond field-effect transistors. IWMSE 2017. 2017 Invited
  6. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Logic circuits with hydrogenated diamond MOSFETs. International Conference on Diamond and Carbon Materials 2017. 2017
  7. 井村 将隆, バナル ガニパン ライアン, 劉 江偉, 廖 梅勇, 小出 康夫. Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3 st. 28th International Conference on Diamond and Carbon Materials. 2017
  8. 劉 江偉, 大里 啓孝, 王 煕, 廖 梅勇, 小出 康夫. Fabrication of triple-gate hydrogenated diamond MOSFETs. International Conference on Diamond and Carbon Materials 2017. 2017
  9. 劉 江偉, 大里 啓孝, 廖 梅勇, 井村 将隆, 渡辺　英一郎, 小出 康夫. Diamond logic circuits with depletion- and enhancement-mode MOSFETs. 29th International Conference on Defects in Semiconductors. 2017
  10. 劉 江偉. Recent development for semiconductor diamond based MOSFETs. The International Conference on New Materials and Applications. 2017 Invited
  11. 劉 江偉. Recent developments for our diamond electronic devices. Collaborative Conference on Materials Research (CCMR) 2017. 2017 Invited
  12. 小出 康夫, 劉 江偉, 廖 梅勇, 井村 将隆. D/E-mode control of diamond FETs and logic circuit demonstration. Conference on Single Crystal Diamond and Electronics (SCDE2017). 2017 Invited
  13. 小出 康夫, 劉 江偉, 廖 梅勇, 井村 将隆. High-current triple-gate H-diamond MOSFET. New Diamond and Nano Carbon Conference, (NDNC2017). 2017
  14. IMURA, Masataka, BANAL, Ganipan Ryan, LIAO, Meiyong, LIU, Jiangwei, AIZAWA, Takashi, TANAKA, Akihiro, IWAI, Hideo, MANO, Takaaki, KOIDE, Yasuo. Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111). The 11th Conference on New Diamond and Nano Carbons (NDNC2017). 2017
  15. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Enhancement-mode Hydrogenated Diamond MOSFETs and MOSFET Logic Circuits. 1st Workshop of "LEADER". 2017
  16. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Diamond NOT and NOR logic circuits. 第64回応用物理学会春季学術講演会. 2017
  17. IMURA, Masataka, BANAL, Ganipan Ryan, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere. Hasselt Diamond Workshop 2017 - SBDD XXII. 2017
  18. 達 博, 劉 江偉, ンギュエン クウォン ター, 塚越 一仁, 岩井 秀夫, 吉川 英樹, 田沼 繁夫. Virtual substrate method for nanomaterials characterization. 共用・計測　合同シンポジウム2017 . 2017
2016
  1. 劉 江偉. Single crystalline diamond MOSFETs and Logic circuits. 2016 china international carbon materials conference. 2016 Invited
  2. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. Fabrication of hydrogenated diamond MOSFET logic circuits. 第30回ダイヤモンドシンポジウム. 2016
  3. 劉 江偉. Hydrogenated diamond MOSFETs and Logic circuits. Nanotechnology-2016 . 2016 Invited
  4. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Recent Developments in Diamond MOSFET Electronic Devices. ICYS Workshop FY2016. 2016
  5. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. Hydrogenated diamond NOT and NOR logic gates composed of enhancement-mode and depletion-mode MOSFETs. The 77th JSAP Autumn Meeting, 2016. 2016
  6. バナル ガニパン ライアン, 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. Electrical properties of H-terminated diamond field effect transistors with AlN gate material sputter-deposited under Ar+N2 atmosphere. The 77th JSAP Autumn Meeting, 2016. 2016
  7. 劉 江偉, 大里 啓孝, 王 煕, 廖 梅勇, 小出 康夫. Fabrication of triple-gate fin-type hydrogenated diamond MOSFETs. The 77th JSAP Autumn Meeting, 2016. 2016
  8. 井村 将隆, バナル ガニパン ライアン, 廖 梅勇, 劉 江偉, 小出 康夫, 松元隆夫, 柴田直哉, 幾原雄一. Microstructure and Hole Accumulation Mechanism of AlN/Diamond(111) Heterojunctions Prepared by MOVPE. International Conference on Diamond and Carbon Materials 2016. 2016
  9. バナル ガニパン ライアン, 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors. International Conference on Diamond and Carbon Materials 2016. 2016
  10. ベルベニオティス エリシオス, 大川 祐司, マカロバ マリナ, 小出 康夫, 劉 江偉, スミド ブレチスラブ, 渡邊 賢司, 谷口 尚, 小松 克伊, ヨアヒム クリスチャン, 青野 正和. 原子レベルで平坦な表面上でのジアセチレン化合物の単分子膜および集合体への自己集合. AFM Conference 2016. 2016
  11. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. High-k TiO2 on Diamond for Electronic Devices: Capacitor, Field-effect Transistor, and Logic Inverter. 10th International Conference on New Diamond and Nano Carbons. 2016
  12. ベルベニオティス エリシオス, 大川 祐司, マカロバ マリナ, 小出 康夫, 劉 江偉, スミド ブレチスラブ, 渡邊 賢司, 谷口 尚, 小松 克伊, ヨアヒム クリスチャン, 青野 正和. 原子レベルで平坦な表面上でのジアセチレン化合物の単分子膜および集合体への自己集合. 2016 E-MRS Spring Meeting and Exhibit. 2016
  13. 劉 江偉. Our studies on Diamond Electronic Devices. University of Science and Technology Beijing Visiting. 2016 Invited
  14. 劉 江偉. Semiconductor diamond metal-insulator-semiconductor field-effect transistors. 2016 Energy, Materials, and Nanotechnology (EMN) Meeting. 2016 Invited
  15. 劉 江偉, 廖 梅勇, 井村 将隆, バナル ガニパン ライアン, 小出 康夫. High-k TiO2 Films Deposition on Hydrogenated-diamond. 第63回応用物理学会春季学術講演会. 2016
  16. ベルベニオティス エリシオス, 大川 祐司, マカロバ マリナ, 小出 康夫, 劉 江偉, スミド ブレチスラブ, 渡邊 賢司, 谷口 尚, 小松 克伊, ヨアヒム クリスチャン, 青野 正和. 原子レベルで平坦な表面上でのジアセチレン化合物の単分子膜および集合体への自己集合. MANA International Symposium 2016. 2016
  17. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Enhancement mode hydrogenated diamond MISFETs. MANA International Symposium 2016. 2016
  18. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. High-k oxide gated diamond field effect transistor. WCSM-2016. 2016 Invited
  19. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Fabrication of Normally Off Diamond Metal-insulator-semiconductor field-effect transistors. ICYS Workshop 2016. 2016
2015
  1. 廖 梅勇, 劉 江偉, サン リウエン, David Coatchup, Jianling Li, 井村 将隆, 小出 康夫, Haitao Ye. Impedance Analysis of Hydrogen-Terminated Diamond MOS Structure. MRS Fall Meeting 2015 . 2015
  2. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Control of normally-on/off in hydrogenated-diamond MISFET. 第２９回ダイヤモンドシンポジウム. 2015
  3. 井村 将隆, バナル ガニパン ライアン, 劉 江偉, 小出 康夫. AlN/ダイヤモンド及びダイヤモンド/AlN/サ ファイア上のヘテロエピタキシャル成長. 第29回ダイヤモンドシンポジウム. 2015
  4. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. ZrO2 on hydrogenated-diamond: breakdown electric field, interfacial band configuration, and gate-drain distance scaling effect for electrical property of MISFET. 第７６回応用物理学会秋季講演会. 2015
  5. バナル ガニパン ライアン, 井村 将隆, 劉 江偉, 小出 康夫. ALD-Al2O3/SD-AlN as Bilayer Gate Material for Diamond FET. The Japan Society of Applied Physics Autumn Meeting, 2015. 2015
  6. 小出 康夫, 井村 将隆, 劉 江偉, 廖 梅勇, バナル ガニパン ライアン, 松元隆夫, 柴田直哉, 幾原雄一. Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs. ICDCM 2015. 2015
  7. 劉 江偉. Insulator on hydrogenated-diamond for electronic devices: from capacitor to logic inverter. FP7 IRSES project meeting. 2015 Invited
  8. 廖 梅勇, 劉 江偉, サン リウエン, David Coatchup, Jianling Li, 井村 将隆, Haitao Ye, 小出 康夫. Impedance Spectroscopy of Diamond MOS Structure. the 9th International Conference on New Diamonds and Nano Carbon. 2015
  9. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Hydrogenated-diamond MISFET logic inverter. 9th International Conference on New Diamond and Nano Carbons. 2015
  10. 劉 江偉. Hydrogenated-diamond Logic Inverter. EMN East Meeting. 2015 Invited
  11. 小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇. Diamond FETs using heterojunction and high-k dielectrics. ISPlasma2015 / IC-PLANTS2015. 2015 Invited
  12. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Atomic Layer Deposited High-k Insulators on Hydrogenated-diamond for Field Effect Transistors. MANA International Symposium 2015. 2015
  13. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Diamond Ring Oscillator. ICYS Workshop 2015. 2015
2014
  1. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor. The 4th Annual World Congress of Nano-S&T. 2014
  2. 劉 江偉, 小出 康夫. Diamond logic inverter fabrication. NIMS forum 2014. 2014
  3. 小出 康夫, 劉 江偉, 井村 将隆, 廖 梅勇. Diamond FETs using heterojunction and high-k dielectrics. EuMIC2014. 2014 Invited
  4. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫, 松元隆夫, 柴田直哉, 幾原雄一. AlN/ (111)面ダイヤモンドヘテロ接合界面の微細構造観察 と電気的特性評価. 第75回応用物理学会秋季学術講演会. 2014
  5. 小出 康夫, 井村 将隆, 劉 江偉, 廖 梅勇. 窒化物半導体の界面制御とナノラミネート特異構造を用いた電子デバイスの開発. 第75回応用物理学会秋季学術講演会. 2014 Invited
  6. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Hydrogenated-diamond logic inverter fabrication with enhancement-mode metal-insulator-semiconductor field effect transistor. 第75回応用物理学会秋季学術講演会. 2014
  7. 井村 将隆, 田中 彰博, 岩井 秀夫, 劉 江偉, 廖 梅勇, 小出 康夫. Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X-ray Photoelectron Spectroscopy. International Conference on Solid State Devices and Materials. 2014
  8. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication. International Conference on Diamond and Carbon Materials. 2014
  9. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. Recent progress of field effect transistors by AlN/Diamond Heterostructure. The 15th IUMRS-International Conference in Asia (IUMRS-ICA 2014). 2014 Invited
  10. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. HfO2 on hydrogenated-diamond for field effect transistors. IUMRS-ICA 2014. 2014
  11. IMURA, Masataka, TANAKA, Akihiro, IWAI, Hideo, LIU, Jiangwei, LIAO, Meiyong, KOIDE, Yasuo. Energy-Band Offset of AlN/Diamond(111) Heterojunction Determined by X-ray Photoelectron Spectroscopy. 第33回電子材料シンポジウム. 2014
  12. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3 . 14th International Conference on Atomic Layer Deposition. 2014
  13. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Diamond metal-insulator-semiconductor field effect transistor logic inverters. 2014 International Symposium on Single Crystal Diamond Electroni. 2014
  14. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Fabrication of low on-resistance diamond field effect transistors. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  15. 劉 江偉, 廖 梅勇, 井村 将隆, 大里 啓孝, 渡辺 英一郎, 小出 康夫. Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  16. 小出 康夫, 劉 江偉, 廖 梅勇, 井村 将隆, 大里 啓孝, 渡辺 英一郎. Frequency dispersion properties at Al2O3 and HfO2/H-terminated diamond interfaces. New Diamond and Nano Carbons Conference (NDNC 2014). 2014
  17. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Normally-off HfO2/diamond field effect transistors fabrication. 2014年 第61回応用物理学会春季学術講演会. 2014
  18. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. MOVPE法による(111)面ダイヤモンド基板上のAlNの高品質化. 第61回応用物理学会春季学術講演会. 2014
  19. 小出 康夫, 劉 江偉, 廖 梅勇, 井村 将隆, 大里 啓孝, 渡辺 英一郎, 津谷 大樹. Al2O3およびHfO2/水素終端ダイヤモンド界面の周波数分散特性. 第61回応用物理学会春季学術講演会. 2014
2013
  1. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. HfO2/diamond電界効果トランジスタの作成. 第27回ダイヤモンドシンポジウム. 2013
  2. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. HfO2/Hydrogenated-diamond field effect transistors for power devices. 第13回 NIMSフォーラム. 2013
  3. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Electrical characteristics and band configuration of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor structure. 2013 JSAP-MRS Joint Symposia. 2013
  4. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Fabrication of HfO2/hydrogenated diamond metal-oxide-semiconductor field effect transistors. International Conference on Diamond and Carbon Materials. 2013
  5. 井村 将隆, 大里 啓孝, 渡辺 英一郎, 津谷 大樹, 劉 江偉, 廖 梅勇, 小出 康夫. 水素＋アンモニア熱処理により作製したアルミナ絶縁体/ダイヤモンドpチャネルFET. International Conference on Diamond and Carbon Materials 2013. 2013
  6. 井村 将隆, 劉 江偉, 廖 梅勇, 小出 康夫. ダイヤモンドFETのための原子層堆積成長. NIMS Conference 2013. 2013
  7. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Combination with Atomic Layer Deposition Technique for Fabrication of High-performance HfO2/diamond Metal-oxide-insulator Field Effect Transistors. 2013 NIMS conference. 2013
  8. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes. 2013 New Diamond and Nanocarbon. 2013
  9. 劉 江偉, Shaoheng Cheng, 廖 梅勇, 井村 将隆, 田中 彰博, 岩井 秀夫, 小出 康夫. Interfacial Electronic Band Alignment of Ta2O5/Hydrogen-terminated diamond Heterojunction Determined by X-ray Photoelectron Spec. 2013 New Diamond and Nanocarbon . 2013
  10. 劉 江偉, 廖 梅勇, 井村 将隆, 小出 康夫. 原子層堆積法による水素終端ダイヤモンド上にＡｌ２Ｏ３とＨｆＯ２の電子構造. 第60回応用物理学会春季学術講演会. 2013

Misc TSV

2018
  1. LIU, Jiangwei. Activity Report of Young Researchers Dispatched Overseas Program on Materials Science and Advanced Electronics Created by Singularity. 新学術領域「特異構造の結晶科学」News Letter. (2018) 1-2
2016
  1. Jiangwei Liu, Hongyang Zhao, Jinlong Liu, Aurélien Maréchal, Wei Wang. Semiconductors: Materials, Physics, and Devices. Active and Passive Electronic Components. 2016 (2016) 1-2 10.1155/2016/4523960 Open Access

Published patent applications TSV

  1. ダイヤモンド半導体装置、それを用いたロジック装置、及びダイヤモンド半導体装置の製造方法 (2018)
  2. ノーマリーオフ特性を有する水素化ダイヤモンドＭＩＳＦＥＴの製造方法 (2017)
  3. トリプルゲートＨ－ダイヤモンドＭＩＳＦＥＴ及びその製造方法 (2017)

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