Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO<sub>2</sub> as gate dielectric | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric
(Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate die)

J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide.

Applied Physics Letters 102 [11] 112910. 2013.

https://doi.org/10.1063/1.4798289

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:59:50 +0900更新時刻: 2024-03-31 14:13:05 +0900

▲ページトップへ移動