Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO<sub>2</sub> as gate dielectric | SAMURAI, NIMS Researchers Directory Service

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Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric
(Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate die)

J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide.

Applied Physics Letters 102 [11] 112910. 2013.

https://doi.org/10.1063/1.4798289

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 16:59:50 +0900Updated at: 2024-05-01 07:08:39 +0900

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