HOME > 論文 > 書誌詳細Boron-doped diamond MOSFETs operating at temperatures up to 400°CJiangwei Liu, Tokuyuki Teraji, Bo Da, Yasuo Koide. Functional Diamond 5 [1] 2450513. 2025.https://doi.org/10.1080/26941112.2025.2450513 Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR) NIMS著者劉 江偉寺地 徳之達 博Materials Data Repository (MDR)上の本文・データセットMDRavailable Boron-doped diamond MOSFETs operating at temperatures up to 400°C 作成時刻: 2025-03-06 03:06:25 +0900 更新時刻: 2026-04-19 04:32:14 +0900
