Atomic layer deposited Al2O3/diamond field effect transistors using surface p-channel prepared by thermal treatment with H2+NH3
14th International Conference on Atomic Layer Deposition. 2014.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-26 20:52:23 +0900更新時刻: 2017-12-27 21:35:53 +0900