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角谷 正友
Address
305-0044 茨城県つくば市並木1-1 [アクセス]

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論文 TSV

2020
  1. Masatomo Sumiya, Masato Sumita, Yuya Asai, Ryo Tamura, Akira Uedono, Akitaka Yoshigoe. Dynamic Observation and Theoretical Analysis of Initial O2 Molecule Adsorption on Polar and m-Plane Surfaces of GaN. The Journal of Physical Chemistry C. 124 [46] (2020) 25282-25290 10.1021/acs.jpcc.0c07151
  2. Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Li, Lei Wang, Xinke Liu, Yasuo Koide, Liwen Sang. Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistor. Journal of Alloys and Compounds. 829 (2020) 154542 10.1016/j.jallcom.2020.154542
  3. Masatomo Sumiya, Dickson Kindole, Kiyotaka Fukuda, Shuhei Yashiro, Kanji Takehana, Tohru Honda, Yasutaka Imanaka. Growth of AlGaN/InGaN/GaN Heterostructure on AlN Template/Sapphire. physica status solidi (b). 257 [4] (2020) 1900524 10.1002/pssb.201900524
  4. Masatomo Sumiya, Kiyotaka Fukuda, Shuhei Yasiro, Tohru Honda. Influence of thin MOCVD-grown GaN layer on underlying AlN template. Journal of Crystal Growth. 532 (2020) 125376 10.1016/j.jcrysgro.2019.125376
  5. Liwen Sang, Meiyong Liao, Xuelin Yang, Huanying Sun, Jie Zhang, Masatomo Sumiya, Bo Shen. Strain-enhanced high Q-factor GaN micro-electromechanical resonator. Science and Technology of Advanced Materials. 21 [1] (2020) 515-523 10.1080/14686996.2020.1792257
  6. Yuji Okamoto, Masatomo Sumiya, Yuya Nakamura, Yoshikazu Suzuki. Effective silicon production from SiCl4 source using hydrogen radicals generated and transported at atmospheric pressure. Science and Technology of Advanced Materials. 21 [1] (2020) 482-491 10.1080/14686996.2020.1789438
2019
  1. Haruka Matsuura, Takeyoshi Onuma, Masatomo Sumiya, Tomohiro Yamaguchi, Bing Ren, Meiyong Liao, Tohru Honda, Liwen Sang. MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template. Applied Sciences. 9 [9] (2019) 1746 10.3390/app9091746
  2. Bing Ren, Meiyong Liao, Masatomo Sumiya, Jian Huang, Linjun Wang, Yasuo Koide, Liwen Sang. Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates. Applied Sciences. 9 [14] (2019) 2895 10.3390/app9142895
  3. Liwen Sang, Bing Ren, Raimu Endo, Takuya Masuda, Hideyuki Yasufuku, Meiyong Liao, Toshihide Nabatame, Masatomo Sumiya, Yasuo Koide. Boosting the doping efficiency of Mg in p-GaN grown on the free-standing GaN substrates. Applied Physics Letters. 115 [17] (2019) 172103 10.1063/1.5124904
  4. Masatomo Sumiya, Kiyotaka Fukuda, Hajime Fujikura, Taichiro Konno, Takayuki Suzuki, Tetsuji Fujimoto, Takehiro Yoshida, Shigenori Ueda, Kenji Watanabe, Tsuyoshi Ohnishi, Tohru Honda. Growth of InGaN films on hardness-controlled bulk GaN substrates. Applied Physics Letters. 115 [17] (2019) 172102 10.1063/1.5110224
  5. Roberto Félix, Wolfram Witte, Dimitrios Hariskos, Stefan Paetel, Michael Powalla, Mickael Lozac'h, Shigenori Ueda, Masatomo Sumiya, Hideki Yoshikawa, Keisuke Kobayashi, Wanli Yang, Regan G. Wilks, Marcus Bär. Near‐Surface [Ga]/([In]+[Ga]) Composition in Cu(In,Ga)Se 2 Thin‐Film Solar Cell Absorbers: An Overlooked Material Feature. physica status solidi (a). 216 [18] (2019) 1800856 10.1002/pssa.201800856
  6. M. Sumiya, K. Fukuda, S. Takashima, S. Ueda, T. Onuma, T. Yamaguchi, T. Honda, A. Uedono. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy. Journal of Crystal Growth. 511 (2019) 15-18 10.1016/j.jcrysgro.2019.01.021
  7. Yuji Okamoto, Masatomo Sumiya, Yoshikazu Suzuki. Perovskite Solar Cells with >19% Efficiency Achieved by an Advanced Three-Step Method Using Additional HC(NH2)2I–NaI Spin-Coating. ACS Applied Energy Materials. 2 [3] (2019) 1823-1831 10.1021/acsaem.8b01978
  8. Bing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang. High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states. Journal of Physics D: Applied Physics. 52 [8] (2019) 085105 10.1088/1361-6463/aaf5ba
  9. Dickson Kindole, Yasutaka Imanaka, Kanji Takehana, Liwen Sang, Masatomo Sumiya. Terahertz Cyclotron Resonance in AlGaN/GaN Heterostructures. Journal of the Korean Physical Society. 74 [2] (2019) 159-163 10.3938/jkps.74.159
2018
  1. Masatomo Sumiya, Kiyotaka Fukuda, Hideo Iwai, Tomohiro Yamaguchi, Takeyoshi Onuma, Tohru Honda. Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy. AIP Advances. 8 [11] (2018) 115225 10.1063/1.5052493
  2. Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang. Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments. Journal of Alloys and Compounds. 767 (2018) 600-605 10.1016/j.jallcom.2018.07.150
  3. Bing Ren, Yue Shen, Xinke Liu, Masatomo Sumiya, Yasuo Koide, Bing Ren, Meiyong Liao, SUMIYA, Masatomo, LIAO, Meiyong, Liwen Sang, KOIDE, Yasuo, Xinke Liu, Yue Shen, SANG, Liwen. Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments. Journal of Alloys and Compounds. 767 (2018) 600-605
  4. Fatima Zohra Dahmani, Yuji Okamoto, Daiki Tsutsumi, Takamasa Ishigaki, Hideomi Koinuma, Saad Hamzaoui, Samir Flazi, Masatomo Sumiya. Density evaluation of remotely-supplied hydrogen radicals produced via tungsten filament method for SiCl4 reduction. Japanese Journal of Applied Physics. 57 [5] (2018) 051301 10.7567/jjap.57.051301
  5. Liwen Sang, Bing Ren, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors. Journal of Applied Physics. 123 [16] (2018) 161423 10.1063/1.5010952
  6. Akira Uedono, Toshihide Nabatame, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Masatomo Sumiya, Shoji Ishibashi. Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams. Journal of Applied Physics. 123 [15] (2018) 155302 10.1063/1.5026831
  7. Yuji Okamoto, Takeshi Yasuda, Masatomo Sumiya, Yoshikazu Suzuki. Perovskite Solar Cells Prepared by Advanced Three-Step Method Using Additional HC(NH2)2I Spin-Coating: Efficiency Improvement with Multiple Bandgap Structure. ACS Applied Energy Materials. 1 [3] (2018) 1389-1394 10.1021/acsaem.8b00178
  8. Xiaoxiao Sun, Xinqiang Wang, Shitao Liu, Ping Wang, Ding Wang, Xiantong Zheng, Liwen Sang, Masatomo Sumiya, Shigenori Ueda, Mo Li, Jian Zhang, Weikun Ge, Bo Shen. Determination of the transition point from electron accumulation to depletion at the surface of In x Ga1− x N films. Applied Physics Express. 11 [2] (2018) 021001 10.7567/apex.11.021001
  9. Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma, Tohru Honda. Valence band edge tail states and band gap defect levels of GaN bulk and In x Ga1− x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy. Applied Physics Express. 11 [2] (2018) 021002 10.7567/apex.11.021002
2017
  1. Akira Uedono, Taketoshi Tanaka, Norikazu Ito, Ken Nakahara, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Masatomo Sumiya. Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams. Thin Solid Films. 639 (2017) 78-83 10.1016/j.tsf.2017.08.021
  2. Akira Uedono, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Shoji Ishibashi, Masatomo Sumiya, Yusuke Mori. Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation. Journal of Crystal Growth. 475 (2017) 261-265 10.1016/j.jcrysgro.2017.06.027
  3. Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano. Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes. Applied Physics Letters. 111 [12] (2017) 122102 10.1063/1.4994627
  4. Yuta Nakayasu, Takaaki Tomai, Nobuto Oka, Kanako Shojiki, Shigeyuki Kuboya, Ryuji Katayama, Liwen Sang, Masatomo Sumiya, Itaru Honma. Fabrication of Cu 2 ZnSnS 4 thin films using a Cu-Zn-Sn-O amorphous precursor and supercritical fluid sulfurization. Thin Solid Films. 638 (2017) 244-250 10.1016/j.tsf.2017.07.063
  5. Bing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang. Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance. Applied Physics Express. 10 [5] (2017) 051001 10.7567/apex.10.051001
  6. Takaaki Tomai, Yoji Yasui, Shinji Watanabe, Yuta Nakayasu, Liwen Sang, Masatomo Sumiya, Takeshi Momose, Itaru Honma. Fabrication of three-dimensional CuInS 2 solar-cell structure via supercritical fluid processing. The Journal of Supercritical Fluids. 120 (2017) 448-452 10.1016/j.supflu.2016.05.026
  7. Masatomo Sumiya, Naoki Toyomitsu, Yoshitaka Nakano, Jianyu Wang, Yoshitomo Harada, Liwen Sang, Takashi Sekiguchi, Tomohiro Yamaguchi, Tohru Honda. Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates. APL Materials. 5 [1] (2017) 016105 10.1063/1.4974935
2015
  1. X. Rong, X. Q. Wang, G. Chen, X. T. Zheng, P. Wang, F. J. Xu, Z. X. Qin, N. Tang, Y. H. Chen, L. W. Sang, M. Sumiya, W. K. Ge, B. Shen. Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells. Scientific Reports. 5 [1] (2015) 10.1038/srep14386
  2. Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya. Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures. Philosophical Magazine Letters. 95 [6] (2015) 333-339 10.1080/09500839.2015.1062154
  3. Masatomo Sumiya, Tohru Honda, Liwen Sang, Yoshitaka Nakano, Kenji Watanabe, Fumio Hasegawa. Improvement of strained InGaN solar cell performance with a heavily doped n+-GaN substrate. physica status solidi (a). 212 [5] (2015) 1033-1038 10.1002/pssa.201431732
  4. Yao Yin, Huabin Sun, Liwen Sang, Peng Chen, Youdou Zheng, Benjamin Dierre, Masatomo Sumiya, Yi Shi, Takashi Sekiguchi. Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures. AIP Advances. 5 [5] (2015) 057129 10.1063/1.4921207
  5. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. InGaN-based thin film solar cells: Epitaxy, structural design, and photovoltaic properties. Journal of Applied Physics. 117 [10] (2015) 105706 10.1063/1.4914908
2014
  1. Akira Uedono, Nakaaki Yoshihara, Yuhao Zhang, Min Sun, Daniel Piedra, Tatsuya Fujishima, Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios. Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam. Applied Physics Express. 7 [12] (2014) 121001 10.7567/apex.7.121001
  2. Akira Uedono, SUMIYA, Masatomo, Shoji Ishibashi, Nagayasu Oshima, Suzuki Ryoichi. エネルギー可変陽電子ビームによるInxGa1-xN薄膜の空孔型欠陥の評価. 日本陽電子科学会会報「陽電子科学」第3号(2014年). 3 (2014) 3-11
  3. Akira Uedono, Tatsuya Fujishima, Daniel Piedra, Nakaaki Yoshihara, Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios. Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam. Applied Physics Letters. 105 [5] (2014) 052108 10.1063/1.4892834
  4. Liwen Sang, Meiyong Liao, Qifeng Liang, Masaki Takeguchi, Benjamin Dierre, Bo Shen, Takashi Sekiguchi, Yasuo Koide, Masatomo Sumiya. A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure. Advanced Materials. 26 [9] (2014) 1414-1420 10.1002/adma.201304335
  5. Akira Uedono, Tatsuya Fujishima, Yu Cao, Yang Zhang, Nakaaki Yoshihara, Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios. Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam. Applied Physics Letters. 104 [8] (2014) 082110 10.1063/1.4866966
2013
  1. Akira Uedono, Tomohito Watanabe, Shogo Kimura, Yang Zhang, Mickael Lozac'h, Liwen Sang, Shoji Ishibashi, Nagayasu Oshima, Ryoichi Suzuki, Masatomo Sumiya. Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams. Journal of Applied Physics. 114 [18] (2013) 184504 10.1063/1.4830033
  2. Liwen Sang, Meiyong Liao, Masatomo Sumiya. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures. Sensors. 13 [8] (2013) 10482-10518 10.3390/s130810482
  3. Yohei Fujita, Yasushi Takano, Yoku Inoue, Masatomo Sumiya, Shunro Fuke, Takayuki Nakano. Double-Polarity Selective Area Growth of GaN Metal Organic Vapor Phase Epitaxy by Using Carbon Mask Layers. Japanese Journal of Applied Physics. 52 [8S] (2013) 08JB26 10.7567/jjap.52.08jb26
  4. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. Temperature and Light Intensity Dependence of Photocurrent Transport Mechanisms in InGaN p–i–n Homojunction Solar Cells. JAPANESE JOURNAL OF APPLIED PHYSICS. 52 [8] (2013) 08JF04-1-08JF04-4
  5. D. Gerlach, R. G. Wilks, D. Wippler, M. Wimmer, M. Lozac'h, R. Félix, A. Mück, M. Meier, S. Ueda, H. Yoshikawa, M. Gorgoi, K. Lips, B. Rech, M. Sumiya, J. Hüpkes, K. Kobayashi, M. Bär. The silicon/zinc oxide interface in amorphous silicon-based thin-film solar cells: Understanding an empirically optimized contact. Applied Physics Letters. 103 [2] (2013) 023903 10.1063/1.4813448
  6. Masatomo Sumiya, Tomohiro Akizuki, Kenji Itaka, Makoto Kubota, Kenta Tsubouchi, Takamasa Ishigaki, Hideomi Koinuma. Effect of hydrogen radical on decomposition of chlorosilane source gases. Journal of Physics: Conference Series. 441 (2013) 012003 10.1088/1742-6596/441/1/012003
  7. G. Chen, Z. L. Li, X. Q. Wang, C. C. Huang, X. Rong, L. W. Sang, F. J. Xu, N. Tang, Z. X. Qin, M. Sumiya, Y. H. Chen, W. K. Ge, B. Shen. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells. Applied Physics Letters. 102 [19] (2013) 192109 10.1063/1.4807131
  8. A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac'h, L. W. Sang, S. Ishibashi, M. Sumiya. Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam. Journal of Applied Physics. 113 [12] (2013) 123502 10.1063/1.4795815
  9. Mickaël Lozac'h, Yoshitaka Nakano, Liwen Sang, Kazuaki Sakoda, Masatomo Sumiya. Fabrication of transparent conducting polymer/GaN Schottky junction for deep level defect evaluation under light irradiation. physica status solidi (a). 210 [3] (2013) 470-473 10.1002/pssa.201200716
  10. Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi, Masatomo Sumiya. Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy. Science and Technology of Advanced Materials. 14 [1] (2013) 015007 10.1088/1468-6996/14/1/015007
  11. D. Gerlach, D. Wippler, R. G. Wilks, M. Wimmer, M. Lozac'h, R. Félix, S. Ueda, H. Yoshikawa, K. Lips, B. Rech, M. Sumiya, K. Kobayashi, M. Gorgoi, J. Hüpkes, M. Bär. p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study. IEEE Journal of Photovoltaics. 3 [1] (2013) 483-487 10.1109/jphotov.2012.2224644
2012
  1. Mickael Lozac'h, Yoshitaka Nakano, Liwen Sang, Kazuaki Sakoda, Masatomo Sumiya. Study of Defect Levels in the Band Gap for a Thick InGaN Film. Japanese Journal of Applied Physics. 51 [12R] (2012) 121001 10.7567/jjap.51.121001
  2. Eiji Fujimoto, Masatomo Sumiya, Tsuyoshi Ohnishi, Mikk Lippmaa, Masaki Takeguchi, Hideomi Koinuma, Yuji Matsumoto. Development of a new laser heating system for thin film growth by chemical vapor deposition. Review of Scientific Instruments. 83 [9] (2012) 094701 10.1063/1.4748126
  3. A. Uedono, S. Ishibashi, T. Watanabe, X. Q. Wang, S. T. Liu, G. Chen, L. W. Sang, M. Sumiya, B. Shen. Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam. Journal of Applied Physics. 112 [1] (2012) 014507 10.1063/1.4732141
  4. SUMIYA, Masatomo, SANG, Liwen. 窒化物薄膜やZnO薄膜など次世代太陽電池に期待されるマテリアル. マテリアルステージ. 12 [2] (2012) 46-49
  5. L. W. Sang, M. Y. Liao, Y. Koide, M. Sumiya. InGaN photodiodes using CaF2 insulator for high-temperature UV detection. physica status solidi (c). 9 [3-4] (2012) 953-956 10.1002/pssc.201100374
2011
  1. Seitaro Ito, Tomomi Shimazaki, Momoji Kubo, Hideomi Koinuma, Masatomo Sumiya. Communication: The reason why +c ZnO surface is less stable than −c ZnO surface: First-principles calculation. The Journal of Chemical Physics. 135 [24] (2011) 241103 10.1063/1.3675680
  2. H. Koinuma, SUMIYA, Masatomo, Izumi Nakai. サハラソーラーブリーダー計画 −宇宙船地球号の持続的発展に向けたドン・キホーテ的研究−. 化学. 66 [12] (2011) 35-41
  3. S. T. Liu, X. Q. Wang, G. Chen, Y. W. Zhang, L. Feng, C. C. Huang, F. J. Xu, N. Tang, L. W. Sang, M. Sumiya, B. Shen. Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing. Journal of Applied Physics. 110 [11] (2011) 113514 10.1063/1.3668111
  4. Liwen Sang, Meiyong Liao, Naoki Ikeda, Yasuo Koide, Masatomo Sumiya. Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer. Applied Physics Letters. 99 [16] (2011) 161109 10.1063/1.3654155
  5. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. High-temperature ultraviolet detection based on InGaN Schottky photodiodes. Applied Physics Letters. 99 [3] (2011) 031115 10.1063/1.3615291
  6. K. Nishio, M. Matvejeff, R. Takahashi, M. Lippmaa, M. Sumiya, H. Yoshikawa, K. Kobayashi, Y. Yamashita. Delta-doped epitaxial La:SrTiO3 field-effect transistor. Applied Physics Letters. 98 [24] (2011) 242113 10.1063/1.3600782
  7. Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya. High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator. Applied Physics Letters. 98 [10] (2011) 103502 10.1063/1.3562326
  8. Baoe Li, Yutaka Adachi, Jianyong Li, Hedeyo Okushi, Isao Sakaguchi, Shigenori Ueda, Hideki Yoshikawa, Yoshiyuki Yamashita, Shoichi Senju, Keisuke Kobayashi, Masatomo Sumiya, Hajime Haneda, Naoki Ohashi. Defects in ZnO transparent conductors studied by capacitance transients at ZnO/Si interface. Applied Physics Letters. 98 [8] (2011) 082101 10.1063/1.3556440
  9. Nobuyuki Matsuki, Yoshihiro Irokawa, Yoshitaka Nakano, Masatomo Sumiya. π-Conjugated polymer/GaN Schottky solar cells. Solar Energy Materials and Solar Cells. 95 [1] (2011) 284-287 10.1016/j.solmat.2010.04.063
2010
  1. NOBUYUKI MATSUKI, YOSHITAKA NAKANO, YOSHIHIRO IROKAWA, MASATOMO SUMIYA. HETEROINTERFACE PROPERTIES OF NOVEL HYBRID SOLAR CELLS CONSISTING OF TRANSPARENT CONDUCTIVE POLYMERS AND III-NITRIDE SEMICONDUCTOR. Journal of Nonlinear Optical Physics & Materials. 19 [04] (2010) 703-711 10.1142/s0218863510005601
  2. Liwen Sang, Masaki Takeguchi, Woong Lee, Yoshiko Nakayama, Mickael Lozac'h, Takashi Sekiguchi, Masatomo Sumiya. Phase Separation Resulting from Mg Doping in p-InGaN Film Grown on GaN/Sapphire Template. Applied Physics Express. 3 [11] (2010) 111004 10.1143/apex.3.111004
  3. Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy. physica status solidi (c). 7 [10] (2010) 2365-2367 10.1002/pssc.200983900
  4. Seitaro Ito, Masatomo Sumiya, Masahiro Mieno, Hideomi Koinuma. Growth of MgxZn1−xO film by MOCVD equipped laser heating system. Materials Science and Engineering: B. 173 [1-3] (2010) 11-13 10.1016/j.mseb.2009.12.012
  5. Eiji Fujimoto, Kenji Watanabe, Yuji. Matsumoto, Hideomi Koinuma, Masatomo Sumiya. Reduction of nonradiative recombination center for ZnO films grown under Zn-rich conditions by metal organic chemical vapor deposition. Applied Physics Letters. 97 [13] (2010) 131913 10.1063/1.3492855
  6. M. Sumiya, M. Lozach, N. Matsuki, S. Ito, N. Ohhashi, K. Sakoda, H. Yoshikawa, S. Ueda, K. Kobayashi. Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy. physica status solidi (c). 7 [7-8] (2010) 1903-1905 10.1002/pssc.200983596
  7. Masatomo Sumiya, Yutaro Kamo, Naoki. Ohashi, Masaki Takeguchi, Yoon-Uk Heo, Hideki Yoshikawa, Shigenori Ueda, Keisuke Kobayashi, Tokuaki Nihashi, Minoru Hagino, Takayuki Nakano, Shunro Fuke. Fabrication and hard X-ray photoemission analysis of photocathodes with sharp solar-blind sensitivity using AlGaN films grown on Si substrates. Applied Surface Science. 256 [14] (2010) 4442-4446 10.1016/j.apsusc.2010.01.038
2009
  1. Takayuki Nakano, Nishimoto Kazuki, SUMIYA, Masatomo, Shunro Fuke. GROWTH AND PROPERTIES OF ZNO FILMS GROWN. JOURNAL OF AUTOMATION, MOBILE ROBOTICS & INTELLIGENT SYSTEMS. 3 [4] (2009) 124-126
  2. Hisashi Matsumura, Yasuo Kanematsu, Takayoshi Shimura, Takayuki Tamaki, Yasuyuki Ozeki, Kazuyoshi Itoh, Masatomo Sumiya, Takayuki Nakano, Shunro Fuke. Lateral Polarity Control in GaN Based on Selective Growth Procedure Using Carbon Mask Layers. Applied Physics Express. 2 [10] (2009) 101001 10.1143/apex.2.101001
  3. Yoshihiro Irokawa, Nobuyuki Matsuki, Masatomo Sumiya, Yoshiki Sakuma, Takashi Sekiguchi, Toyohiro Chikyo, Yasunobu Sumida, Yoshitaka Nakano. Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes. physica status solidi (RRL) - Rapid Research Letters. 3 [7-8] (2009) 266-268 10.1002/pssr.200903204
  4. Nobuyuki Matsuki, Yoshihiro Irokawa, Takuya Matsui, Michio Kondo, Masatomo Sumiya. Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes. Applied Physics Express. 2 [9] (2009) 092201 10.1143/apex.2.092201
  5. Eiji Fujimoto, Masatomo Sumiya, Tsuyoshi Ohnishi, Kenji Watanabe, Mikk Lippmaa, Yuji Matsumoto, Hideomi Koinuma. Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition. Applied Physics Express. 2 (2009) 045502 10.1143/apex.2.045502
2008
  1. SUMIYA, Masatomo. 分極場の影響と回避技術. LED革新のための最新技術と展望. (2008) 96-104
2006
  1. M. Kazan, P. Masri, M. Sumiya. Zone center optical phonons in AlxGa1−xN mixed crystals. Journal of Applied Physics. 100 [1] (2006) 013508 10.1063/1.2209557
  2. H. Matsumura, M. Sumiya, Y. Kawai, M. Tomiki, K. Murakami, S. Fuke. Microfabrication of GaN groove on sapphire substrate treated selectively by electron-beam. physica status solidi (c). 3 [6] (2006) 1649-1652 10.1002/pssc.200565409
  3. Takashi Matsuoka, Yasuyuki Kobayashi, Hiroko Takahata, Toshitugu Mitate, Seiichiro Mizuno, Atsushi Sasaki, Mamoru Yoshimoto, Tuyoshi Ohnishi, Masatomo Sumiya. N-polarity GaN on sapphire substrate grown by MOVPE. physica status solidi (b). 243 [7] (2006) 1446-1450 10.1002/pssb.200565456

書籍 TSV

2011
  1. Nobuyuki Matsuki, Yoshitaka Nakano, Yoshihiro Irokawa, Mickael Lozach, Masatomo Sumiy. Transparent Conducting Polymer/Nitride Semiconductor Heterojunction Solar Cells. SOLAR CELLS − NEW ASPECTS AND SOLUTIONS. InTech, 2011, 307-324. 10.5772/20976

会議録 TSV

2019
  1. 角谷 正友. 光熱偏向分光法によるギャップ中準位の評価. 第24回結晶工学セミナー「ワイドギャップ半導体結晶の評価とプロセス技術」ー評価/プロセスからマテリアルの本質に迫るー. 2019, 13-18
2014
  1. SUMIYA, Masatomo, SANG, Liwen. III-V族窒化物物の光電変換デバイスへの応用. 平成25年度多元系化合物・太陽電池研究会 年末講演会 本稿集. 2014, 7-10
2013
  1. D. Gerlach, D. Wippler, R. G. Wilks, M. Wimmer, M. Lozac'h, R. Félix, S. Ueda, H. Yoshikawa, K. Lips, B. Rech, M. Sumiya, K. Kobayashi, M. Gorgoi, J. Hüpkes, M. Bär. p-Type a-Si:H/ZnO:Al and μc-Si:H/ZnO:Al Thin-Film Solar Cell Structures—A Comparative Hard X-Ray Photoelectron Spectroscopy Study. IEEE JOURNAL OF PHOTOVOLTAICS. 2013, 483-487
  2. Masatomo Sumiya, Tomohiro Akizuki, Kenji Itaka, Makoto Kubota, Kenta Tsubouchi, Takamasa Ishigaki, Hideomi Koinuma. Effect of hydrogen radical on decomposition of chlorosilane source gases. JOURNAL OF PHYSICS:CONFERENCE SERIES. 2013, 012003-1-012003-6
2012
  1. SUMIYA, Masatomo, A. Uedono, Y.Nakano, T. Honda. Potentila of III-V Nitride Films for the Application to Photovoltaic Device. Proceedings of The 11th International Symposium on Advanced Technology. 2012, 109-110
  2. L. W. Sang, M. Y. Liao, Y. Koide, M. Sumiya. InGaN photodiodes using CaF2 insulator for high-temperature UV detection. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2012, 953-956
  3. SUMIYA, Masatomo, SANG, Liwen, LOZACH, Mickael. III-V族窒化物薄膜の太陽電池応用. 信学技報. 2012, 9-12
  4. A.Uedono, S.Ishibashi, T.Watanabe, X.Q.Wang, S.T.Liu, G.Chen, SANG, Liwen, SUMIYA, Masatomo, B.Shen. Defect Characterization of InGaN Alloys Probed Using a Monoenergetic Positron Beam. Proceedings of The 11th International Symposium on Advanced Technology. 2012, 113-114
2011
  1. Nobuyuki Matsuki, Yoshihiro Irokawa, Yoshitaka Nakano, Masatomo Sumiya. π-Conjugated polymer/GaN Schottky solar cells. SOLAR ENERGY MATERIALS AND SOLAR CELLS. 2011, 284-287
2010
  1. M. Sumiya, M. Lozach, N. Matsuki, S. Ito, N. Ohhashi, K. Sakoda, H. Yoshikawa, S. Ueda, K. Kobayashi. Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy. PHYSICA STATUS SOLIDI C. 2010, 1903-1905
  2. NOBUYUKI MATSUKI, YOSHITAKA NAKANO, YOSHIHIRO IROKAWA, MASATOMO SUMIYA. HETEROINTERFACE PROPERTIES OF NOVEL HYBRID SOLAR CELLS CONSISTING OF TRANSPARENT CONDUCTIVE POLYMERS AND III-NITRIDE SEMICONDUCTOR. JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS. 2010, 703-711
  3. Yoshitaka Nakano, MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Electrical characterization of n-GaN epilayers using transparent polyaniline Schottky contacts. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2010, 2007-2009
  4. IROKAWA, Yoshihiro, MATSUKI, Nobuyuki, SUMIYA, Masatomo, SAKUMA, Yoshiki, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro, Sumida Yasunobu, Yoshitaka Nakano. Anomalous Capacitance-Voltage Characteristics of Pt-AlGaN/GaN Schottky diodes exposed to hydrogen. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2010, 1928-1930
  5. Seitaro Ito, Masatomo Sumiya, Masahiro Mieno, Hideomi Koinuma. Growth of MgxZn1−xO film by MOCVD equipped laser heating system. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. 2010, 11-13
  6. Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa. Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2010, 2365-2367
2008
  1. Shunro Fuke, SUMIYA, Masatomo, Tokuaki Nihashi, Minoru Hagino, Masayuki Matsumoto, Yutaro Kamo, Masayuki Sato, Kouji Ohtsuka. Development of UV-photocathodes using GaN film on Si substrate. Proceedings of SPIE 2008. 2008, 1F-1-1F-7
  2. Shunro Fuke, SUMIYA, Masatomo, Tokuaki Nihashi, Minoru Hagino, Masayuki Matsumoto, Yutaro Kamo, Masayuki Sato, Kouji Ohtsuka. Development of UV-photocathodes using GaN film on Si substrate. PROCEEDINGS OF SPIE. 2008, 68941F-1-68941F-7
2007
  1. SUMIYA, Masatomo, Keisuke Ohara, Takeho Ohsawa, Yu Kawai, Masato Shirai, Syunro Fuke, Hideomi Koinuma, Yuji Matsumoto. Photo-catalysis effect of III-V nitride film. physica status solidi (c). 2007, 2642-2645

口頭発表 TSV

2020
  1. 永田 賢二, 角谷 正友, 田沼 繁夫, 篠塚 寛志, 登坂 弘明, 原田 善之, 松波 成行, 吉川 英樹, 庄野逸, 村上諒. BIC自動ピークフィッティング技術を用いたXPSデータセットのハイスループット解析手法. 2020年度 実用表面分析講演会 Symposium on Practical Surface Analysis 2020 (PSA-20). 2020
2019
  1. 角谷 正友. 光熱偏向分光法によるギャップ中準位の評価. 第24回結晶工学セミナー. 2019
  2. SUMIYA, Masatomo, KINDOLE, Dickson Zakaria, TAKEHANA, Kanji, YASHIRO, Syuhei, 本田徹, IMANAKA, Yasutaka. Electron transport at the interface of AlGaN/InGaN fabricated on AlN template. 日本MRS創立30周年記念シンポジウム. 2019
  3. 角谷 正友. 光熱偏向分光によるIII-V族窒化物の評価. レーザ・量子エレクトロニクス研究会. 2019
  4. 矢代 秀平, 本田徹, 角谷 正友. AlNテンプレート上に成長したGaN薄膜の 光熱偏向分光法による評価. 第2回結晶工学ⅹISYSE 合同研究会. 2019
  5. SANG, Liwen, 任 兵, ENDO, Raimu, MASUDA, Takuya, NABATAME, Toshihide, SUMIYA, Masatomo, KOIDE, Yasuo, LIAO, Meiyong. Enhanced doping efficiency of p-GaN grown on free standing GaN substrates. The 9th Asia-Pacific Workshop on Widegap Semiconductors. 2019
  6. 今中 康貴, キンドル ディクソン ザカッリア, 竹端 寛治, 角谷 正友. InGaN二次元電子系の有効質量の評価. 第80回応用物理学会秋季学術講演会. 2019
  7. 角谷 正友, 福田 清貴, 本田徹, 矢代 秀平, 竹端 寛治, Dickson Kindole, 今中 康貴. サイクロトロン共鳴に向けたAlNテンプレート上 AlGaN/InGaNヘテロ構造の成長. 第80回応用物理学会秋季学術講演会. 2019
  8. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SUMIYA, Masatomo. Cyclotron Resonance in AlGaN/InxGa1-xN Heterostructures. 日本物理学会2019年秋季大会. 2019
  9. SUMIYA, Masatomo, YASHIRO, Syuhei, Dickson Kindole, 本田徹, IMANAKA, Yasutaka. Direct Growth of AlGaN/InGaN/GaN Structure on AlN Template for Measurement of Effective Mass in InGaN Layer. 13th International Conference on Nitride Semiconductors. 2019
  10. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Carrier concentration dependence of cyclotron resonance in AlGaN/GaN heterostructures. The 74TH JPS ANNUAL MEETING (2019). 2019
  11. 角谷 正友, 吉越章隆, 吉越章隆, 隅田真人, 上田 茂典, 隅田真人. 放射光光電子分光によるIII-V族窒化物半導体の価電子帯構造と 表面酸化プロセスの評価. 第66回応用物理学会春季学術講演会. 2019
  12. 福田 清貴, 今野秦一郎, 藤本哲爾, 矢代 秀平, 角谷 正友, 吉田丈洋, 本田徹, 藤倉序章, 尾沼猛儀, 吉田丈洋, 山口智広, 尾沼猛儀, 鈴木貴正, 山口智広, 本田徹. 光熱偏向分光法によるGaN自立基板上ホモエピタキシャル層の評価. 第66回応用物理春季学術講演会. 2019
  13. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Cyclotron Resonance in Quantum Hall Systems. NIMS AMCP Symposium 2019. 2019
2018
  1. SANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo, Interface trap states at p-GaN MO(I)S capacitors with different gate dielectrics. IWN2018. 2018
  2. ASAI, Yuya, 吉越章隆, 隅田真人, 上殿 明良, SUMIYA, Masatomo. Study of the dependence of GaN surface oxidation on the crystalline plane by in-situ XPS during O2 molecular beam irradiation. International workshop on nitride semiconductors 2018. 2018
  3. 任 兵, Jian Huang, KOIDE, Yasuo, SUMIYA, Masatomo, Ke Tang, LIAO, Meiyong, Linjun Wang, SANG, Liwen. Interface trap characterization of Al2O3/GaN MOS capacitors on GaN substrate with surface treatments. IWN2018. 2018
  4. FUKUDA, Kiyotaka, ASAI, Yuya, SANG, Liwen, 吉越章隆, 尾沼猛儀, 山口智広, 本田徹, SUMIYA, Masatomo. Evaluation of Al2O3 /n-, p-GaN samples by photothermal deflection spectroscopy. International workshop of nitride semiconductors 2018. 2018
  5. SANG, Liwen, 任 兵, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Investigation on the trap states at p-GaN MO(I)S interface with different gate dielectric layers. 応用物理学会. 2018
  6. Takeyoshi Onuma, Akira Uedono, Tomohiro Yamaguchi, 福田清貴, 高島信也, 山口智広, 本田徹, 上殿明良, Shinya Takashima, Tohru Honda, 尾沼猛儀, 角谷正友. 光熱偏向分光法によるMgイオン注入GaN層の評価. 第79回応用物理学会秋季学術講演会. 2018
  7. FUKUDA, Kiyotaka, ASAI, Yuya, SANG, Liwen, Akitaka Yoshigoe, Akira Uedono, ISHIGAKI, Takamasa, Takeyoshi Onuma, Tomohiro Yamaguchi, Tohru Honda, SUMIYA, Masatomo. Al2O3/n-, p-GaN構造の光熱偏向分光法による評価. 第79回応用物理学会秋季学術講演会. 2018
  8. ASAI, Yuya, Keisuke Seki, Akitaka Yoshigoe, Masato Sumita, Akira Uedono, ISHIGAKI, Takamasa, SUMIYA, Masatomo. 分子線酸素ビーム照射下その場観察XPSによる GaN表面酸化の面方位依存性. 第79回応用物理学会秋季学術講演会. 2018
  9. OKAMOTO, Yuji, Yuya Nakamura, Yoshikazu Suzuki, SUMIYA, Masatomo. 外部輸送した水素ラジカルによるSiCl4還元からのSi作製. 第79回応用物理学会秋季学術講演会. 2018
  10. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SUMIYA, Masatomo. Cyclotron Resonance and Magneto-transport Studies in InGaN/GaN Heterostructures. 日本物理学会2018年秋季大会. 2018
  11. SUMIYA, Masatomo. Evaluation of Structural Disorder and In-Gap States of III-V nitrides by Photothermal Deflection Spectroscopy. 7th International symposium of nitride semiconductors. 2018
  12. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Polaron Cyclotron Resonance in AlGaN/GaN heterostructures. 34th Int. Conf. on the Physics of Semiconductors. 2018
  13. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Terahertz Cyclotron Resonance in AlGaN/GaN Heterostructures. 19th Int. Conf. Semiconductors and Application. 2018
  14. SUMIYA, Masatomo, FUKUDA, Kiyotaka, Shinya Takashima, Tomohiro Yamaguchi, Takeyoshi Onuma, Tohru Honda, Akira Uedono. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy. 19th International Conference Metalorganic Vapor Epitaxy. 2018
  15. SUMIYA, Masatomo, FUKUDA, Kiyotaka, 高島信也, 山口智広, 尾沼猛儀, 本田徹, 上殿明良. Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy. 19th International Conference Metalorganic Vapor Epitaxy. 2018
  16. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. 強磁場サイクロトロン共鳴による GaN二次元電子系の有効質量の評価 II. 日本物理学会第73回年次大会. 2018
  17. SUMIYA, Masatomo, FUKUDA, Kiyotaka, UEDA, Shigenori, ASAI, Yuya, CHO, Yujin, SEKIGUCHI, Takashi, Akira Uedono, Takeyoshi Onuma, SANG, Liwen, Tomohiro Yamaguchi, Toru Honda. III-V 族窒化物の価電子帯構造およびギャップ内準位の評価. 第65回応用物理学会春季学術講演会. 2018
  18. FUKUDA, Kiyotaka, Takeyoshi Onuma, Tomohiro Yamaguchi, Toru Honda, IWAI, Hideo, SANG, Liwen, SUMIYA, Masatomo. イオン注入した GaN の光熱偏向分光法による評価. 第65回応用物理学会春季学術講演会. 2018
  19. Akira Uedono, Shoji Ishibashi, SUMIYA, Masatomo. 陽電子消滅による窒化物半導体中 0 次元特異構造(点欠陥) のキャリア捕獲の評価. 第65回応用物理学会春季学術講演会. 2018
  20. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Terahertz Cyclotron resonance in AlGaN/GaN hetrostructures Dickson. NIMS先端計測シンポジウム2018. 2018
2017
  1. KINDOLE, Dickson Zakaria, IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Cyclotron Resonance in GaN Quantum Hall Systems. 強磁場フォーラム研究会. 2017
  2. IMANAKA, Yasutaka, KINDOLE, Dickson Zakaria, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. 強磁場サイクロトロン共鳴による GaN二次元電子系の有効質量の評価. 日本物理学会2017年秋季大会. 2017
  3. FUKUDA, Kiyotaka, Takeyoshi Onuma, SANG, Liwen, Tomohiro Yamaguchi, Toru Honda, SUMIYA, Masatomo. 光熱偏向分法による 光熱偏向分法による Ga 1-xIn xN薄膜の評価. 第78回応用物理学会秋季学術講演会. 2017
  4. OKAMOTO, Yuji, TSUTSUMI, Daiki, ISHIGAKI, Takamasa, DAHMANI, Fatima Zohra, SUMIYA, Masatomo. SiCl4の水素ラジカル 還元 による低温 Si 生成. 第78回応用物理学会秋季学術講演会. 2017
  5. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. Strain and dislocations in the InGaN-based intermediate-band solar cells. International Conference on Defects in Semiconductors(ICDS) 2017. 2017
  6. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. Strain and dislocations in the InGaN-based intermediate-band solar cel ls. International Conference on Defects in Semiconductors. 2017
  7. REN, Bing, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo, SANG, Liwen. Fixed Charge and Trap States in Ni/Al2O3/GaN MIS Schottky Barrier Diodes for Power Device. International Conference on Defects in Semiconductors(ICDS) 2017. 2017
  8. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. The influence of interface states on the CaF2/p-GaN metal-insulator-semiconductor capacitors. International Conference on Defects in Semiconductors(CDS) 2017. 2017
  9. SANG, Liwen, REN, Bing, LIAO, Meiyong, SUMIYA, Masatomo, KOIDE, Yasuo. Growth rate dependence and leakage mechanism for vertical-type Schottky barrier diodes fabricated on MOCVD-GaN/GaN substrates . 第64回応用物理学会春季学術講演会. 2017
2016
  1. SUMIYA, Masatomo, SANG, Liwen. InGaN系太陽電池の欠陥制御と高効率化. 2016年真空・表面科学合同講演会:第36回表面科学学術講演会・第57回. 2016
  2. SUMIYA, Masatomo. Key factors for improvement of InGaN photovoltaic performance. the International Workshop on Nitride Semiconductors (IWN 2016) . 2016
  3. ZHANG, Kexiong, SUMIYA, Masatomo, LIAO, Meiyong, KOIDE, Yasuo, SANG, Liwen. InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas. International Workshop on Nitride Semiconductors (IWN 2016). 2016
  4. MATSUURA, Haruka, SANG, Liwen, SUMIYA, Masatomo, Tomohiro Yamaguchi, Tohru Honda. Impact of buffer layer thickness and annealing time for the optical and structural properties of GaN epilayers grown on sapphire. European Materials Research Society 2016 Fall Meeting. 2016
  5. OKAMOTO, Yuji, TSUTSUMI, Daiki, ISHIGAKI, Takamasa, DAHMANI, Fatima Zohra, SUMIYA, Masatomo. 熱フィラメント法で生成した水素ラジカルによる大気圧下でのSiC4の分解. 第77回応用物理学会秋季学術講演会. 2016
  6. TSUTSUMI, Daiki, OKAMOTO, Yuji, ISHIGAKI, Takamasa, SUMIYA, Masatomo. 誘導結合型プラズマを用いて生成した水素ラジカルへの窒素の影響. 第77回応用物理学会秋季学術講演会. 2016
  7. SANG, Liwen, ZHANG, Kexiong, SUMIYA, Masatomo, LIAO, Meiyong, KOIDE, Yasuo. PチャネルInGaN/GaN ヘテロ構造金属酸化物半導体電界効果トランジスタ. 応用物理学会春季学術講演会. 2016
2015
  1. IMANAKA, Yasutaka, TAKEHANA, Kanji, SANG, Liwen, SUMIYA, Masatomo. Magneto-transmission in GaN quantum Hall systems. ICFSI-15. 2015
  2. OKAMOTO, Yuji, DAHMANI, Fatima Zohra, TSUTSUMI, Daiki, ISHIGAKI, Takamasa, SUMIYA, Masatomo. 熱フィラメント法による大気圧下での水素ラジカル発生とその濃度測定. 第76回応用物理学会秋季学術講演会. 2015
  3. SUMIYA, Masatomo, SANG, Liwen. 窒化物太陽電池の現状と課題. 第76回応用物理学会秋季学術講演会. 2015
  4. CHIKYOW, Toyohiro, NAGATA, Takahiro, SUMIYA, Masatomo, SUZUKI, Setsu, ISHIBASHI, Keiji, TAKAHASHI, Kenichiro. GaN on Si の現状と課題. 東京理科大学ジョイントセミナー. 2015
  5. SUMIYA, Masatomo. PVcellを使ったIII-V族窒化物薄膜太陽電池の理論計算. 結晶成長とデバイス解析セミナー. 2015
  6. SUMIYA, Masatomo. Effect of remote hydrogen radical for developing more than Siemens process. The 5th Asia-Arab Sustainable Energy Forum . 2015
  7. TOYOMITSU, Naoki, HARADA, Yoshitomo, SANG, Liwen, SEKIGUCHI, Takashi, Tomohiro Yamaguchi, Tohru Honda, SUMIYA, Masatomo. InGaN薄膜表面に形成されたピットのCLと不純物との相関. 第62回応用物理学会春季学術講演会. 2015
  8. DAHMANI, Fatima Zohra, OKAMOTO, Yuji, TSUTSUMI, Daiki, ISHIGAKI, Takamasa, KOINUMA, Hideomi, SUMIYA, Masatomo. Development of apparatus supplying hydrogen radical remotely to decompose SiCl4 source. 第62回応用物理学会春季学術講演会. 2015
  9. NAKAURA, Takuya, HARADA, Yoshitomo, NAGATA, Takahiro, SEKIGUCHI, Takashi, CHIKYOW, Toyohiro, SUZUKI, Setsu, ISHIGAKI, Takamasa, SUMIYA, Masatomo. MOCVD法を用いて成長したNドープZnO膜のアニール効果. 第62回応用物理学会春季学術講演会. 2015
2014
  1. SUMIYA, Masatomo, DAHMANI, Fatima Zohra, OKAMOTO, Yuji, TSUTSUMI, Daiki, Yoshikazu Suzuki, KOINUMA, Hideomi. DEVELOPMENT OF REMOTE-TYPE HYDROGEN RADICAL GENERATOR TO DECOMPOSE SiCl4 SOURCE IN ATMOSPHERIC PRESSURE. Tunisia-Japan Symposium. 2014
  2. Naoki Toyomitsu, SANG, Liwen, Tomohiro Yamaguchi, Toru Honda, SUMIYA, Masatomo. 下地GaN層の歪の異なるGaInN薄膜表面ピット形成と蛍光特性. 第3回結晶工学未来塾. 2014
  3. SUMIYA, Masatomo, SANG, Liwen, Fumio Hasegawa, Yoshitaka Nakano. III-V族窒化物太陽電池特性のp-GaN 層Mg dopingと InGaN層のキャリア密度依存性. 第75回応用物理学会秋季学術講演会. 2014
  4. SUMIYA, Masatomo. III-V族窒化物太陽電池の開発動向★徹底解説〜次世代の高効率太陽電池の実現を目指す〜. Electronic Journal 第2211回 Technical Semina. 2014
  5. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Multilevel intermediate-band solar cell based on III-Nitrides. The International Workshop on Nitride Semiconductors (IWN2014). 2014
  6. SUMIYA, Masatomo, Toru Honda, SANG, Liwen, Yoshitaka Nakano, Fumio Hasegawa. Improvement of Strained InGaN Solar Cell Performance with a Heavily Doped n+-GaN Substrate. International workshop on nitride semiconductors. 2014
  7. SUMIYA, Masatomo, Yoshikazu Suzuki, OKAMOTO, Yuji, DAHMANI, Fatima Zohra, Kenji Itaka, KOINUMA, Hideomi. Sahara Solar Breeder Initiative for sustainable development of global energy future, Part-3, More than Siemens process for energy saving reduction of SiHxCl1-x. 再生可能エネルギー2014国際会議. 2014
  8. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo. Photoelectrical energy-conversion devices based on III-Nitride semiconductors. The Tenth International Nanotechnology Conference on Communicati. 2014
  9. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo. Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer. 10th Photovoltaic Science Application and Technology (PVSAT-10) . 2014
  10. OKAMOTO, Yuji, Y.Suzuki, H.Koinuma, SUMIYA, Masatomo. 熱プラズマから発生した水素ラジカルによるグラニュー糖と混合したSiO2の還元. 2014年第61回応用物理学会春季学術講演会. 2014
  11. TOYOMITSU, Naoki, SANG, Liwen, Toru Honda, SUMIYA, Masatomo. 蛍光顕微鏡と2次イオン質量分析を用いたGaInN薄膜の不均一評価. 2014年第61回応用物理学会春季学術講演会. 2014
  12. SUMIYA, Masatomo, SANG, Liwen, Fumio Hasegawa, Yoshitaka Nakano. III-V族窒化物薄膜太陽電池の歪を考慮した計算解析. 2014年第61回応用物理学会春季学術講演会. 2014
2013
  1. Y. Naknao, SANG, Liwen, SUMIYA, Masatomo, F. Hasegawa. Electrical Characterization of p-i-n Junction Based on Thick i-InGaN Film for Photovoltaic Applications. 2013 MRS Fall meeting. 2013
  2. Y. Naknao, SANG, Liwen, SUMIYA, Masatomo. Deep-Level Characterization of Thick InGaN Films with Various In Contents for Photovoltaic Applications. 2013 MRS Fall meeting. 2013
  3. Y. Naknao, IROKAWA, Yoshihiro, SUMIYA, Masatomo, Y. Sumida, S. Yagi, H. Kawai. Deep-Level Defects and Turn-On Recovery Characteristics in AlGaN/GaN Hetero-Structures Containing Various Carbon Concentrations. 2013 MRS Fall meeting. 2013
  4. SUMIYA, Masatomo, SANG, Liwen. Growth of Wurtzite Nitride and Oxide Films by Metalorganic Chemical Vapor Deposition for the Device Application. 2nd International conference on advanced electronics. 2013
  5. Akira Uedono, T. Watanabe, S. Kimura, Y. Zhang, LOZACH, Mickael, SANG, Liwen, S. Ishibashi, N. Oshima, R. Suzuki, SUMIYA, Masatomo. Point Defect Characterization in InGaN by Using Monoenergetic Positron Beams. 12th Inter. Conf. on Atomically Contr. Surface, Interfaces & Nan. 2013
  6. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo. Photoelectrical energy conversion devices based on III-Nitride semiconductors. IUPAC 9th International Conference on Novel Materials. 2013
  7. SUMIYA, Masatomo. Development of new process to produce solar grade Si towards photovoltaic application. 2013 International Conference on Emerging Information, Technolog. 2013
  8. SANG, Liwen, LIAO, Meiyong, LIANG, Qifeng, TAKEGUCHI, Masaki, DIERRE, Benjamin, SEKIGUCHI, Takashi, KOIDE, Yasuo, SUMIYA, Masatomo. Multilevel intermediate-band solar cells based on III-Nitrides. 2013年 第74回応用物理学会秋季学術講演会. 2013
  9. HARADA, Yoshitomo, SUMIYA, Masatomo. Growth of non-polar ZnO films with smooth surface by MOCVD in a hydrogen ambient. 2013 JSAP-MRS joint symposium. 2013
  10. HARADA, Yoshitomo, SUMIYA, Masatomo. Growth of non-polar ZnO films with smooth surface by laser heating MOCVD in a hydrogen ambient. 第74回秋季応用物理学会学術講演会 MRSジョイントセッション. 2013
  11. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Multilevel intermediate-band solar cells based on III-Nitrides. 10th International Conference on Nitride Semiconductors. 2013
  12. SANG, Liwen, LIAO, Meiyong, SUMIYA, Masatomo. Multilevel Intermediate-band Solar cell based on III-Nitrides. 10th International Conference on Nitride Semiconductors. 2013
  13. SUMIYA, Masatomo, HARADA, Yoshitomo. Development of non-polar light emitting devices from wruztite oxide and nitride hetero junction system. NIMS conference. 2013
  14. Akira Uedono, T. Tsutusi, T. Watanabe, S. Kimura, Y. Zhang, LOZACH, Mickael, SANG, Liwen, S. Ishibashi, SUMIYA, Masatomo. Vacancy-type defects in InGaN grown by metal organic chemical vapor deposition probed using a monoenergetic positron beam. 55th Electronic Materials. 2013
  15. OHASHI, Naoki, ADACHI, Yutaka, YOSHIKAWA, Hideki, UEDA, Shigenori, SUMIYA, Masatomo, KOBATA, Masaaki, KOBAYASHI, Keisuke. HXPES EXPERIMENTS ON WIDE BAND GAP OXIDE SEMICONDUCTORS. HAXPES 2013. 2013
  16. SUMIYA, Masatomo. III-V族窒化物薄膜の発電デバイスへの応用. 第10回次世代の太陽光発電シンポジウム. 2013
  17. SUMIYA, Masatomo, Yoshitaka Nakano, SANG, Liwen, LOZACH, Mickael, Hasegawa Fumio. Electrical Characterization of InGaN p-i-n junction and solar cell property. The 6th Asia-Pacific Workshop on Widegap Semiconductions. 2013
  18. HARADA, Yoshitomo, SUMIYA, Masatomo. Very narrow temperature window for lateral growth of ZnO thin films by laser heating metalorganic chemical vapor deposition. The 6th Asia-Pacific Workshop on Widegap Semiconductors. 2013
  19. HARADA, Yoshitomo, SUMIYA, Masatomo. Very narrow temperature windo for lateral growht of ZnO thin films by laser heating mMMOCVD. 6th Asia Pacific widegap semiconductore. 2013
  20. SUMIYA, Masatomo, KUBOTA, Makoto, Takamasa Ishigaki. Analysis of Decomposition Reaction of Chlorosilane Sources with Hydrogen Radical by Using Mass Spectroscopy. 第3回アジア・アラブサステナブルエネルギーフォーラム. 2013
  21. SUMIYA, Masatomo, LOZACH, Mickael, UEDA, Shigenori, S. Liu, YOSHIKAWA, Hideki, B. SHen, X. Wang, SANG, Liwen. Angle-resolved analysis of surface band bending in InxGa1-xN films by hard X-ray photoemission spectroscopy. LEDIA '13. 2013
  22. KUBOTA, Makoto, IKEDA, Naoki, KOINUMA, Hideomi, Takamasa Ishigaki, SUMIYA, Masatomo. クロロシラン系原料分解における水素ラジカル発生源の検討. 2013年春季第60回応用仏学関係連合講演会. 2013
  23. SUMIYA, Masatomo. InGaN薄膜の欠陥評価と光電変換特性. 未来エネルギー技術に資する機能素材プロセッシング. 2013
2012
  1. SUMIYA, Masatomo. Development of More than Siemens Si process for remarkable improvement in CVD reaction yield. New technologies for efficient solar energy systems. 2012
  2. Y.Fujita, Y.Takano, Y.Inoue, SUMIYA, Masatomo, S.Fuke, T.Nakano. Research of double polarities selective area growth of GaN by using MOVPE. International Workshop on Nitride Semiconductors 2012(IWN2012). 2012
  3. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Photo-electricity energy conversion devices based on InGaN film. International Workshop on Nitride Semiconductors 2012(IWN2012). 2012
  4. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. Photoelectrical energy-conversion devices based on III-Nitride semiconductors. IWN 2012. 2012
  5. LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. Photoeletrical energy-conversion devices based on III-Nitride semiconductors. IUMRS Int'l Conf. on Electronic Materials (IUMRS-ICEM2012). 2012
  6. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, SUMIYA, Masatomo, KOIDE, Yasuo. 極薄AlN挿入によるInGaN太陽電池特性の向上. 2012年 秋季 第73回応用物理学会学術講演会. 2012
  7. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. 極薄AIN挿入によるInGaN太陽電池特性の向上. 第73回応用物理学会学術講演会. 2012
  8. Y.Nakano, M.Nibe, LOZACH, Mickael, SANG, Liwen, SUMIYA, Masatomo. InGaN厚膜の欠陥準位評価. 第73回応用物理学会学術講演会. 2012
  9. Y.Fujita, Takano, T.Thubasa, SUMIYA, Masatomo, S.Fuke, T.Nakano. MOVPE法を用いたGaN両極性同時成長プロセスの開発. 第73回応用物理学会学術講演会. 2012
  10. T.Watanabe, A.Uedono, S.Ishibashi, X.Q.Wang, S.T.Liu, G.Chen, SANG, Liwen, SUMIYA, Masatomo, B.Shen. 低速陽電子ビームを用いたInxGa1-xN混晶の空孔型欠陥の検出. 第73回応用物理学会学術講演会. 2012
  11. SUMIYA, Masatomo, SANG, Liwen, LOZACH, Mickael, Y.Nakano. Growth and deep level defect evaluation of InGaN films for the application of photovoltaic devices. International Symposium of Growth of III-Nitrides(ISCN-4). 2012
  12. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. Photoelectrical energy-conversion devices based on III-Nitrde semiconductors. Nano Thailand 2012 conference. 2012
  13. LOZACH, Mickael, Yoshitaka Nakano, SANG, Liwen, SAKODA, Kazuaki, SUMIYA, Masatomo. Schottky properties enhanced by using compensated Mg doped InGaN thin films material at interface metal-InGaN. ISPlasma2012. 2012
  14. SUMIYA, Masatomo. III-V族窒化物薄膜の太陽電池応用. 連携ラボ第7回公開シンポジウム. 2012
2011
  1. SUMIYA, Masatomo. ZnO film growth by MOCVD. Electronic Materials Meeting 2011. 2011
  2. SUMIYA, Masatomo, T.hashimoto, H.Koinuma. Innovative fabrication of solar grade Si materials directed towards sustainable-energy society. International Conference on “Minerals and Materials-Mongolia”. 2011
  3. SUMIYA, Masatomo, AKIZUKI, Tomohiro, Masataka Ishigaki, Takuya Hashimoto, KOINUMA, Hideomi. Hydrogen radical effect on Si production for more than Siemens process. The 1st Asia-Arab Sustainable Energy Forum. 2011
  4. SUMIYA, Masatomo, SANG, Liwen, LOZACH, Mickael, YOSHIKAWA, Hideki, UEDA, Shigenori, SAKODA, Kazuaki, Xinqiang Wang, Saitou Lau. Evaluation of InxGa1-xN films by hard x-ray photoemission spectroscopy. ICNS-9. 2011
  5. SANG, Liwen, LIAO, Meiyong, KOIDE, Yasuo, SUMIYA, Masatomo. High-performance metal-semiconductor-metal photodetectors using CaF2 as the insulator. 5th Asia-Pacific Workshop on Widegap Semiconductors. 2011
  6. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. Effect of a super-thin AlN interlayer on the improvement of InGaN-based solar cell performance. 5th Asia-Pacific Workshop on Widegap Semiconductors. 2011
  7. SUMIYA, Masatomo. Effect of polarity wurtzite nitride and oxide materials grown by MOVPE and their new application. 物性物理学 - 北京大学フォーラム. 2011
  8. SUMIYA, Masatomo. Effect of the polarity on wurtzitenitride and oxide materials grown by MOVPE and their new applicatio. 北京大学固体物理学セミナー. 2011
  9. SANG, Liwen, LIAO, Meiyong, IKEDA, Naoki, KOIDE, Yasuo, SUMIYA, Masatomo. 極薄AlN 挿入によるInGaN 太陽電池特性の向上. 2011年春季 第58回 応用物理学関係連合講演会. 2011
  10. SUMIYA, Masatomo. シーメンス法の技術革新. 2011年春季 第58回 応用物理学関係連合講演会. 2011
2010
  1. SUMIYA, Masatomo, SANG, Liwen, LOZACH, Mickael. 次世代太陽電池における窒化物半導体太陽電池位置づけとそのロードマップ. 第125委員会・第162委員会合同研究会 「高効率太陽電池の最前線」. 2010
  2. SANG, Liwen, Mickael Lozach, SUMIYA, Masatomo. Suppression of Phase Separation in InGaN film and Fabrication of InGaN solar cells. 平成22年度 窒化物ナノ・エレクトロニクス材料研究センター講演会. 2010
  3. SUMIYA, Masatomo, LOZACH, Mickael, SANG, Liwen. Study on the junction o fIII-V nitride films for the application of solar cell . 3rd International symposimu on innovative solar cells . 2010
  4. SUMIYA, Masatomo, LOZACH, Mickael, SANG, Liwen. III-V族窒化物薄膜の太陽電池応用に向けた接合に関する研究. the 3rd International symposimu on innovative solar cells. 2010
  5. SUMIYA, Masatomo. 窒化物半導体系太陽電池の可能性と課題. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  6. SUMIYA, Masatomo. Growth of wide band gap nitride and oxide films by metalorganic chemical vapor deposition -Effect of the polarity of wurtzite materials and the application of III-V nitride film -. IUMRS-ICEM 2010. 2010
  7. SUMIYA, Masatomo. 水素ラジカルによるSi生成. 第56回マテリアルズ・テーラリング研究会. 2010
  8. LOZACH, Mickael, SAKODA, Kazuaki, SUMIYA, Masatomo. Growth and characterization of InGaN film for solar cell application. 29th Electronic materials symposium. 2010
  9. SUMIYA, Masatomo, AKIZUKI, Tomohiro, ISHIGAKI, Takamasa, Takuya Hashimoto, Kenji Itaka, KOINUMA, Hideomi. Design and preliminary results of innovative Siemens Si process. Renewable energy 2010. 2010
  10. ITO, Seitaro, SHIMAZAKI Tomomi, KUBO Momoji, KOINUMA, Hideomi, SUMIYA, Masatomo. 第一原理計算によるZnO極性表面の安定水素終端構造と酸素極性面からのZnO成長機構の検討. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  11. LOZACH, Mickael, WATANABE, Kenji, SUMIYA, Masatomo, KOBAYASHI, Keisuke, YOSHIKAWA, Hideki, UEDA, Shigenori, SAKODA, Kazuaki. 太陽電池応用に向けたInGaN薄膜の成長と評価. JSAP 57th spring meeting 2010. 2010
  12. 秋月智大, 石垣隆正, 角谷正友, 橋本拓也, 鯉沼秀臣. SOG-Si生成に向けたパルス変調熱プラズマによる水素ラジカルとSiHCl3との反応. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  13. SUMIYA, Masatomo. 酸窒化物系ワイドギャップ材料の開発. 革新的太陽光発電技術研究開発に関する進捗会議. 2010
  14. ITO, Seitaro, SHIMAZAKI Tomomi, KUBO Momoji, KOINUMA, Hideomi, SUMIYA, Masatomo. First principle calculation of polar ZnO surface terminated with hydrogen for understanding the growth mechanism along oxygen-polarity. The Fourth General Meeting of ACCMS-VO. 2010
2009
  1. KOINUMA, Hideomi, SUMIYA, Masatomo, AKIZUKI, Tomohiro, Takamasa Ishigaki, Hiroshi Fujioka. サハラソーラーブリーダー計画に向けた太陽電池用Si元素戦略. 日本MRS創立20周年記念シンポジウム. 2009
  2. MATSUKI, Nobuyuki, Yoshitaka Nakano, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Electrical Interface Structure of Schottky Junctions by π-conjugated Polymer/III-nitride Hetero Structure. SSDM 2009. 2009
  3. MATSUKI, Nobuyuki, Yoshitaka NAKANO, IROKAWA, Yoshihiro, Mikael Lozach, SAKODA, Kazuaki, SUMIYA, Masatomo. 透明導電性高分子/III族窒化物半導体ショットキー型太陽電池の界面構造. 応用物理学会 2009年秋季第70回学術講演会. 2009
  4. SUMIYA, Masatomo, MATSUKI, Nobuyuki. 最近の研究進捗報告. NEDO革新的太陽光発電技術研究開発研究会. 2009
  5. SUMIYA, Masatomo, MATSUKI, Nobuyuki. 最近の研究進捗報告. NEDO革新的太陽光発電技術研究開発研究会. 2009
  6. MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, SUMIYA, Masatomo. Schottky solar cells by III-V nitrides and transparent conductive polymer thin-films. 第28回電子材料シンポジウム(EMS28). 2009
  7. MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, 由崇, SUMIYA, Masatomo. 透明導電性高分子とIII族窒化物半導体によるヘテロ接合太陽電池. 第6回「次世代の太陽光発電システム」シンポジウム. 2009
  8. SUMIYA, Masatomo. GaN薄膜の新規製膜技術と光応答特性向上技術. 化合物系太陽電池の材料設計による高効率化/高品質化技術. 2009
  9. MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, SUMIYA, Masatomo. 透明導電性高分子と窒化物薄膜の接合による太陽電池の開発. 第1回窒化物半導体結晶成長講演会. 2009
  10. SUMIYA, Masatomo, Hisashi Matsumura, Shunro Fuke, SHI, Jianhong, KURIMURA, Sunao. 擬似位相整合波長変換にむけたGaN薄膜の極性反転制御. 第56回応用物理学関係連合講演会. 2009
  11. SUMIYA, Masatomo, FUJIMOTO, Eiji, WATANABE, Kenji, ITO, Seitaro, KOINUMA, Hideomi. レーザー加熱MOCVD法によるZnO薄膜の光学・電気特性向上. 2009年春季 第56回応用物理学関係連合講演会. 2009
  12. SUMIYA, Masatomo, OHASHI, Naoki, Yutaro Kamo, TAKEGUCHI, Masaki, YOSHIKAWA, Hideki, UEDA, Shigenori, KOBAYASHI, Keisuke, Takayuki Nakano, Shunro Fuke. Si(111)基板上AlxGa1-xN薄膜の硬X線光電子分光. 2009年春季 第56回応用物理学関係連合講演会. 2009
  13. ITO, Seitaro, SUMIYA, Masatomo, MIENO, Masahiro, MARUYAMA Shingo, MATSUMOTO Yuji, KOINUMA, Hideomi. レーザー加熱MOCVD法によるMgZnO薄膜の作製. 2009年(平成21年)春季第56回応用物理学関係連合講演会. 2009
  14. MATSUKI, Nobuyuki, IROKAWA, Yoshihiro, ITAKA, Kenji, KOINUMA, Hideomi, SUMIYA, Masatomo. 導電性透明高分子/GaN接合によるショットキー型太陽電池の開発. 平成21年春季第56回応用物理学関係連合講演会. 2009
  15. SUMIYA, Masatomo, MATSUKI, Nobuyuki, ITAKA, Kenji, Masatomo Sumiya. Development of top solar cell using III-V nitride thin film. 革新的太陽光発電国際シンポジウム2009. 2009
  16. SUMIYA, Masatomo. 新材料・新概念の面から取り組む太陽光発電の課題とその最前線. No.10184 JPI特別研究セミナー. 2009
2008
  1. SUMIYA, Masatomo, WATANABE, Kenji, FUJIMOTO, Eiji, KOINUMA, Hideomi. Photoluminescence property of ZnO film grown by metalorganic chemical vapor deposition. IEEE Nanotechnology Materials and Devices Conference 2008. 2008
  2. SUMIYA, Masatomo. 太陽光発電の抱える課題と将来像:NIMSの挑戦. 第3回合同研究会「環境・エネルギー材料研究の今後の展開とナノエレ. 2008
  3. OHNISHI, Tsuyoshi, Keisuke Mochizuki, Hirofumi Yamamoto, FUJIMOTO, Eiji, SUMIYA, Masatomo, Mikk Lippmaa. SrTiO3の発光. 第55回応用物理学関係連合講演会. 2008
2007
  1. SUMIYA, Masatomo, FUJIMOTO, Eiji, KOINUMA, Hideomi. MOCVD法による酸化亜鉛薄膜成長. 東北大学金属材料研究所ワークショップ「酸化亜鉛半導体テクノロジー. 2007
  2. SUMIYA, Masatomo. サファイア基板面内でのGaN薄膜の極性構造制御とその応用. 新技術説明会. 2007
  3. SUMIYA, Masatomo. GaN系薄膜の光触媒効果. 第2回 半導体電気化学セミナー. 2007
  4. FUJIMOTO, Eiji, SUMIYA, Masatomo, Mikk Lippmaa, Tsuyoshi Ohnishi, WATANABE, Kenji, KOINUMA, Hideomi. ZnO Film Grown by MOCVD Method Equipped with the Laser Heating System. The 14th International Workshop on Oxide Electronics. 2007
  5. FUJIMOTO, Eiji, SUMIYA, Masatomo, WATANABE, Kenji, KOINUMA, Hideomi, Tsuyoshi Ohnishi, Mikk Lippmaa. ZnO film grown by MOCVD method equipped iwth the Laser heating system. the 14th International workshop on oxide electronics. 2007
  6. SUMIYA, Masatomo, FUJIMOTO, Eiji. MOCVDによるZnO発光デバイスの開発. JST-CREST鯉沼チーム夏季研究会. 2007
  7. FUJIMOTO, Eiji, SUMIYA, Masatomo. MOCVDによるZnO発光デバイスの開発. JST-CREST鯉沼チーム夏季研究会. 2007
2006
  1. Eiji Fujimoto, SUMIYA, Masatomo, Mikk Lippmaa, Tsuyoshi Ohnishi, Hideomi Koinuma. レーザ基板加熱MOCVD法によるZnO薄膜の作製. 2006年秋季 第67回応用物理学会学術講演会. 2006
  2. SUMIYA, Masatomo, Yuji Matsumoto, Takeo Ohsawa, Keisuke Ohhara, Taichi Nakamachi, Yu Kawai, Shunro Fuke, Hideomi Koinuma. 窒化物系薄膜の光触媒効果における膜厚依存性と可視光化. 第53回応用物理学関係連合講演会. 2006
  3. SUMIYA, Masatomo, Tokuaki Nihashi, Toshihiro Kodama, Yutaro Kamo, Hiroyuki Masuda, Tatsunori Sato, Minoru Hagino, Shunro Fuke. 窒化物薄膜の極性構造を利用した光電面デバイスの開発. 第53回応用物理学関係連合講演会. 2006
  4. SUMIYA, Masatomo. Interface control of sapphire substrate for approaching nano-fabrication of GaN film grown by MOCVD. International Mini-workshop on Nano and Combinatorial Technologi. 2006

その他の文献 TSV

2019
  1. 角谷 正友. 光熱偏向分光による III -V族窒化物の評価. IEICE Technical Report. (2019) 107-110
2013
  1. SUMIYA, Masatomo, Yoshitaka Naknao. 太陽電池技術の基礎 化合物半導体材料. 新太陽エネルギー利用ハンドブック. (2013) 66-71
2012
  1. SUMIYA, Masatomo, SANG, Liwen, Akira Uedono, Yoshitaka Nakano. III-V族窒化物太陽電池. 未来材料. 12 [12] (2012) 15-20

特許 TSV

登録特許
  1. 特許第5791026号 紫外光検出デバイス及びその製造方法 (2015)
  2. 特許第5598818号 複合太陽電池 (2014)
  3. 特許第5541664号 ワイドギャップ半導体のバンドギャップ電子物性の計測方法 (2014)
  4. 特許第5540323号 ショットキー型接合素子とこれを用いた光電変換素子及び太陽電池 (2014)
  5. 特許第4873726号 酸化亜鉛薄膜の形成方法 (2011)
  6. 特許第4505553号 真空プロセス用装置 (2010)
公開特許出願
  1. 特開2011178611号 シリコン生成方法 (2011)
  2. No: WO2008/012956 真空プロセス用装置 (2008)
外国特許
  1. No. US20120067410A1 SCHOTTKY-BARRIER JUNCTION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING THE SAME (2012)
  2. No. CN102365765A Shot key-type junction element, photoelectric conversion element and solar cell using the same (2012)
  3. No. KR2011136853A The schottky type junction device, the photoelectric conversion element using the same and solar cell. (2011)
  4. No. WO2010110475A1 SHOT KEY-TYPE JUNCTION ELEMENT AND PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL USING THE SAME (2010)
  5. No. US20100058987A1 Device For Vacuum Processing (2010)
  6. No. WO2008012956A1 DEVICE FOR VACUUM PROCESS (2008)

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