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Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatments

著者Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang.
掲載誌名Journal of Alloys and Compounds 767 600-605
ISSN: 09258388
ESIでのカテゴリ: MATERIALS SCIENCE
出版社Elsevier BV
発表年2018
言語English
DOIhttps://doi.org/10.1016/j.jallcom.2018.07.150
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