HOME > 論文 > 書誌詳細Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatmentsBing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang. Journal of Alloys and Compounds 767 600-605. 2018.https://doi.org/10.1016/j.jallcom.2018.07.150 NIMS著者角谷 正友廖 梅勇小出 康夫サン リウエンMaterials Data Repository (MDR)上の本文・データセット作成時刻 :2019-03-01 12:15:44 +0900 更新時刻 :2021-03-10 00:54:20 +0900