HOME > 論文 > 書誌詳細Interface trap characterization of Al2O3/GaN vertical-type MOS capacitors on GaN substrate with surface treatmentsBing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Xinke Liu, Yue Shen, Liwen Sang. Journal of Alloys and Compounds 767 600-605. 2018.https://doi.org/10.1016/j.jallcom.2018.07.150 NIMS著者角谷 正友廖 梅勇小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 12:15:44 +0900更新時刻: 2024-09-11 05:03:51 +0900
