P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
(P-Channel InGaN/GaN heterostructure metal-oxidesemiconductor field effect transistor based on polarizationinduced two-dimensional hole gas)

Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Liwen Sang.

Scientific Reports 6 [1] 23683. 2016.

https://doi.org/10.1038/srep23683

Open Access Springer Nature (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-10-26 15:44:38 +0900更新時刻: 2024-03-29 19:12:21 +0900

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