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High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states

著者Bing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang.
掲載誌名Journal of Physics D: Applied Physics 52 [8] 085105
ISSN: 00223727, 13616463
ESIでのカテゴリ: PHYSICS
出版社IOP Publishing
発表年2019
言語English
DOIhttps://doi.org/10.1088/1361-6463/aaf5ba
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