HOME > 論文 > 書誌詳細High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap statesBing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang. Journal of Physics D: Applied Physics 52 [8] 085105. 2019.https://doi.org/10.1088/1361-6463/aaf5ba NIMS著者廖 梅勇角谷 正友小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-03-01 12:18:23 +0900更新時刻: 2024-09-11 04:29:08 +0900
