HOME > Article > DetailHigh-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap statesBing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang. Journal of Physics D: Applied Physics 52 [8] 085105. 2019.https://doi.org/10.1088/1361-6463/aaf5ba NIMS author(s)LIAO, MeiyongSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-03-01 12:18:23 +0900 Updated at: 2026-10-07 04:27:33 +0900
