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Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructures

著者Yoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya.
掲載誌名Philosophical Magazine Letters 95 [6] 333-339
出版社Informa UK Limited
発表年2015
言語English
DOIhttps://doi.org/10.1080/09500839.2015.1062154
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