HOME > 論文 > 書誌詳細Deep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructuresYoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya. Philosophical Magazine Letters 95 [6] 333-339. 2015.https://doi.org/10.1080/09500839.2015.1062154 NIMS著者色川 芳宏角谷 正友Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:52:51 +0900 更新時刻: 2026-06-27 04:51:37 +0900
