HOME > Article > DetailDeep-level defects and turn-on capacitance recovery characteristics in AlGaN/GaN heterostructuresYoshitaka Nakano, Yoshihiro Irokawa, Masatomo Sumiya. Philosophical Magazine Letters 95 [6] 333-339. 2015.https://doi.org/10.1080/09500839.2015.1062154 NIMS author(s)IROKAWA, YoshihiroSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 17:52:51 +0900Updated at: 2024-04-01 18:13:34 +0900
