Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy
(CAICISS測定によるAlNの極性評価)
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2017-02-27 01:42:23 +0900更新時刻: 2024-09-08 05:48:10 +0900