HOME > 会議録 > 書誌詳細Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy(CAICISS測定によるAlNの極性評価)Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2365-2367. 2010.https://doi.org/10.1002/pssc.200983900 NIMS著者井村 将隆大西 剛角谷 正友廖 梅勇小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻 :2017-02-27 01:42:23 +0900 更新時刻 :2018-06-05 12:31:43 +0900