HOME > Proceedings > DetailAnalysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy(CAICISS測定によるAlNの極性評価)Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, Mikk Lippmaa. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 2365-2367. 2010.https://doi.org/10.1002/pssc.200983900 NIMS author(s)IMURA, MasatakaOHNISHI, TsuyoshiSUMIYA, MasatomoLIAO, MeiyongKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-27 01:42:23 +0900Updated at: 2024-10-10 05:46:01 +0900