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Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy
(CAICISS測定によるAlNの極性評価)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-27 01:42:23 +0900 Updated at: 2025-10-22 05:37:57 +0900