HOME > 論文 > 書誌詳細Layered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistorBing Ren, Meiyong Liao, Masatomo Sumiya, Jian Li, Lei Wang, Xinke Liu, Yasuo Koide, Liwen Sang. Journal of Alloys and Compounds 829 154542. 2020.https://doi.org/10.1016/j.jallcom.2020.154542 NIMS著者廖 梅勇角谷 正友小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2020-04-09 03:00:21 +0900更新時刻: 2024-09-05 05:10:19 +0900
