HOME > Article > DetailLayered boron nitride enabling high-performance AlGaN/GaN high electron mobility transistorBing Ren, Meiyong Liao, Masatomo Sumiya, Jian Li, Lei Wang, Xinke Liu, Yasuo Koide, Liwen Sang. Journal of Alloys and Compounds 829 154542. 2020.https://doi.org/10.1016/j.jallcom.2020.154542 Open Access Elsevier BV (Publisher) NIMS author(s)LIAO, MeiyongSUMIYA, MasatomoKOIDE, YasuoSANG, LiwenFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2020-04-09 03:00:21 +0900Updated at: 2024-03-31 00:33:35 +0900
