Vacancy-type defects in In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N alloys probed using a monoenergetic positron beam | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam
(Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam)

A. Uedono, S. Ishibashi, T. Watanabe, X. Q. Wang, S. T. Liu, G. Chen, L. W. Sang, M. Sumiya, B. Shen.

Journal of Applied Physics 112 [1] 014507. 2012.

https://doi.org/10.1063/1.4732141

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:56:16 +0900更新時刻: 2024-03-31 14:39:39 +0900

▲ページトップへ移動