InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas
International Workshop on Nitride Semiconductors (IWN 2016). 2016.
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作成時刻: 2017-01-08 03:54:16 +0900更新時刻: 2017-07-10 22:31:05 +0900