HOME > Presentation > Detail
InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas
International Workshop on Nitride Semiconductors (IWN 2016). 2016.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:54:16 +0900Updated at: 2017-07-10 22:31:05 +0900