HOME > 論文 > 書誌詳細Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beamAkira Uedono, Tatsuya Fujishima, Yu Cao, Yang Zhang, Nakaaki Yoshihara, Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios. Applied Physics Letters 104 [8] 082110. 2014.https://doi.org/10.1063/1.4866966 NIMS著者角谷 正友Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:44:51 +0900 更新時刻: 2026-09-30 05:32:37 +0900
