HOME > Article > DetailOptically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beamAkira Uedono, Tatsuya Fujishima, Yu Cao, Yang Zhang, Nakaaki Yoshihara, Shoji Ishibashi, Masatomo Sumiya, Oleg Laboutin, Wayne Johnson, Tomás Palacios. Applied Physics Letters 104 [8] 082110. 2014.https://doi.org/10.1063/1.4866966 NIMS author(s)SUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 17:44:51 +0900Updated at: 2024-04-01 19:00:11 +0900
