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Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric

著者Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, Liwen Sang.
掲載誌名Applied Physics Express 9 [12] 121002
ISSN: 18820786, 18820778, 09538984
ESIでのカテゴリ: PHYSICS
出版社Japan Society of Applied Physics
発表年2016
言語English
DOIhttps://doi.org/10.7567/apex.9.121002
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