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Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric
(Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric)

Applied Physics Express 9 [12] 121002. 2016.

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    Created at: 2016-11-30 23:51:15 +0900Updated at: 2024-10-10 04:36:25 +0900

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