HOME > Article > DetailElectrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3as gate dielectric(Electrical hysteresis in p-GaN metal–oxide–semiconductor capacitor with atomic-layer-deposited Al2O3 as gate dielectric)Kexiong Zhang, Meiyong Liao, Masataka Imura, Toshihide Nabatame, Akihiko Ohi, Masatomo Sumiya, Yasuo Koide, Liwen Sang. Applied Physics Express 9 [12] 121002. 2016.https://doi.org/10.7567/apex.9.121002 NIMS author(s)LIAO, MeiyongIMURA, MasatakaNABATAME, ToshihideOHI, AkihikoSUMIYA, MasatomoKOIDE, YasuoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-11-30 23:51:15 +0900Updated at: 2024-10-10 04:36:25 +0900