Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures | SAMURAI, NIMS Researchers Directory Service

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Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

Masatomo Sumiya, Yasutaka Imanaka, Yoshitaka Nakano.

Applied Physics Letters 127 [10] 101602. 2025.

https://doi.org/10.1063/5.0283133

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

Created at: 2025-09-13 03:11:31 +0900 Updated at: 2026-09-25 04:32:52 +0900

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