HOME > 論文 > 書誌詳細Effect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructuresMasatomo Sumiya, Yasutaka Imanaka, Yoshitaka Nakano. Applied Physics Letters 127 [10] 101602. 2025.https://doi.org/10.1063/5.0283133 NIMS著者角谷 正友今中 康貴Materials Data Repository (MDR)上の本文・データセット作成時刻: 2025-09-13 03:11:31 +0900 更新時刻: 2025-12-16 04:33:15 +0900
