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Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation

著者Akira Uedono, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Shoji Ishibashi, Masatomo Sumiya, Yusuke Mori.
掲載誌名Journal of Crystal Growth 475 261-265
ISSN: 00220248
ESIでのカテゴリ: CHEMISTRY
出版社Elsevier BV
発表年2017
言語English
DOIhttps://doi.org/10.1016/j.jcrysgro.2017.06.027
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