HOME > 論文 > 書誌詳細Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilationAkira Uedono, Masayuki Imanishi, Mamoru Imade, Masashi Yoshimura, Shoji Ishibashi, Masatomo Sumiya, Yusuke Mori. Journal of Crystal Growth 475 261-265. 2017.https://doi.org/10.1016/j.jcrysgro.2017.06.027 NIMS著者角谷 正友Materials Data Repository (MDR)上の本文・データセット作成時刻: 2018-01-18 20:43:49 +0900更新時刻: 2025-01-13 04:50:28 +0900
