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Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams

著者Akira Uedono, Taketoshi Tanaka, Norikazu Ito, Ken Nakahara, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Masatomo Sumiya.
掲載誌名Thin Solid Films 639 78-83
ISSN: 00406090
ESIでのカテゴリ: MATERIALS SCIENCE
出版社Elsevier BV
発表年2017
言語English
DOIhttps://doi.org/10.1016/j.tsf.2017.08.021
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