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Electron capture by vacancy-type defects in carbon-doped GaN studied using monoenergetic positron beams

Akira Uedono, Taketoshi Tanaka, Norikazu Ito, Ken Nakahara, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Masatomo Sumiya.
Thin Solid Films 639 78-83. 2017.

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    作成時刻: 2018-01-18 20:43:48 +0900更新時刻: 2024-04-01 22:08:08 +0900

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