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Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

著者Akira Uedono, Tomohito Watanabe, Shogo Kimura, Yang Zhang, Mickael Lozac'h, Liwen Sang, Shoji Ishibashi, Nagayasu Oshima, Ryoichi Suzuki, Masatomo Sumiya.
掲載誌名Journal of Applied Physics 114 [18] 184504
ISSN: 00218979, 10897550
ESIでのカテゴリ: PHYSICS
出版社AIP Publishing
発表年2013
言語English
DOIhttps://doi.org/10.1063/1.4830033
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