Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

Akira Uedono; Tomohito Watanabe; Shogo Kimura; Yang Zhang; Mickael Lozac'h; Liwen Sang; Shoji Ishibashi; Nagayasu Oshima; Ryoichi Suzuki; Masatomo Sumiya; Akira Uedono; Tomohito Watanabe; Shogo Kimura; Yang Zhang; Mickael Lozac'h; Liwen Sang; Shoji Ishibashi; Nagayasu Oshima; Ryoichi Suzuki; Masatomo Sumiya

doi:10.1063/1.4830033

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Vacancy-type defects in In_xGa₁₋_xN grown on GaN templates probed using monoenergetic positron beams
(Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams)

Akira Uedono, Tomohito Watanabe, Shogo Kimura, Yang Zhang, Mickael Lozac'h, Liwen Sang, Shoji Ishibashi, Nagayasu Oshima, Ryoichi Suzuki, Masatomo Sumiya.

Journal of Applied Physics 114 [18] 184504. 2013.

https://doi.org/10.1063/1.4830033

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:19:02 +0900 更新時刻: 2026-09-29 06:16:53 +0900

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams(Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Vacancy-type defects in In_xGa₁₋_xN grown on GaN templates probed using monoenergetic positron beams
(Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams)