Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

Akira Uedono; Tomohito Watanabe; Shogo Kimura; Yang Zhang; Mickael Lozac'h; Liwen Sang; Shoji Ishibashi; Nagayasu Oshima; Ryoichi Suzuki; Masatomo Sumiya; Akira Uedono; Tomohito Watanabe; Shogo Kimura; Yang Zhang; Mickael Lozac'h; Liwen Sang; Shoji Ishibashi; Nagayasu Oshima; Ryoichi Suzuki; Masatomo Sumiya

doi:10.1063/1.4830033

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams
(Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams)

Akira Uedono, Tomohito Watanabe, Shogo Kimura, Yang Zhang, Mickael Lozac'h, Liwen Sang, Shoji Ishibashi, Nagayasu Oshima, Ryoichi Suzuki, Masatomo Sumiya.

Journal of Applied Physics 114 [18] 184504. 2013.

https://doi.org/10.1063/1.4830033

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 17:19:02 +0900Updated at: 2024-03-31 11:48:48 +0900

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams(Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams
(Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams)