HOME > 論文 > 書誌詳細Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodesLiwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano. Applied Physics Letters 111 [12] 122102. 2017.https://doi.org/10.1063/1.4994627 NIMS著者角谷 正友廖 梅勇小出 康夫ジョ ユージン生田目 俊秀Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-10-04 21:11:22 +0900更新時刻: 2024-10-05 04:58:22 +0900
