HOME > Article > DetailInitial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodesLiwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, Hiroshi Amano. Applied Physics Letters 111 [12] 122102. 2017.https://doi.org/10.1063/1.4994627 NIMS author(s)SUMIYA, MasatomoLIAO, MeiyongNABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-10-04 21:11:22 +0900 Updated at: 2026-05-24 04:48:24 +0900
