Determination of the surface band bending in In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N films by hard x-ray photoemission spectroscopy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy
(Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy)

Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi, Masatomo Sumiya.

Science and Technology of Advanced Materials 14 [1] 015007. 2013.

https://doi.org/10.1088/1468-6996/14/1/015007

Open Access Informa UK Limited (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:19:11 +0900更新時刻: 2024-03-31 12:15:34 +0900

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