HOME > 論文 > 書誌詳細Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistanceBing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang. Applied Physics Express 10 [5] 051001. 2017.https://doi.org/10.7567/apex.10.051001 NIMS著者廖 梅勇角谷 正友小出 康夫Materials Data Repository (MDR)上の本文・データセット作成時刻: 2017-09-04 22:05:21 +0900更新時刻: 2024-10-08 05:55:33 +0900
