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Nearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistance

著者Bing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang.
掲載誌名Applied Physics Express 10 [5] 051001
ISSN: 18820786, 18820778, 09538984
ESIでのカテゴリ: PHYSICS
出版社Japan Society of Applied Physics
発表年2017
言語English
DOIhttps://doi.org/10.7567/apex.10.051001
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