HOME > Article > DetailNearly ideal vertical GaN Schottky barrier diodes with ultralow turn-on voltage and on-resistanceBing Ren, Meiyong Liao, Masatomo Sumiya, Linjun Wang, Yasuo Koide, Liwen Sang. Applied Physics Express 10 [5] 051001. 2017.https://doi.org/10.7567/apex.10.051001 NIMS author(s)LIAO, MeiyongSUMIYA, MasatomoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-09-04 22:05:21 +0900 Updated at: 2026-10-01 05:45:22 +0900
