Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam

HOME > 論文 > 書誌詳細

Point defects introduced by InN alloying into In_xGa₁₋_xN probed using a monoenergetic positron beam
(Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam)

A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac'h, L. W. Sang, S. Ishibashi, M. Sumiya.

作成時刻: 2016-05-24 17:18:58 +0900 更新時刻: 2026-09-29 07:33:59 +0900