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Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam

著者A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac'h, L. W. Sang, S. Ishibashi, M. Sumiya.
掲載誌名Journal of Applied Physics 113 [12] 123502
ISSN: 00218979, 10897550
ESIでのカテゴリ: PHYSICS
出版社AIP Publishing
発表年2013
言語English
DOIhttps://doi.org/10.1063/1.4795815
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