Point defects introduced by InN alloying into In<sub><i>x</i></sub>Ga<sub>1−</sub><sub><i>x</i></sub>N probed using a monoenergetic positron beam | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam
(Point defects introduced by InN alloying into InxGa1−xN probed using a monoenergetic positron beam)

A. Uedono, T. Tsutsui, T. Watanabe, S. Kimura, Y. Zhang, M. Lozac'h, L. W. Sang, S. Ishibashi, M. Sumiya.

Journal of Applied Physics 113 [12] 123502. 2013.

https://doi.org/10.1063/1.4795815

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作成時刻: 2016-05-24 17:18:58 +0900更新時刻: 2024-03-31 15:07:02 +0900

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